Device Simulation of a Bidirectional Phase Control Thyristor

Kód výsledku v IS VaVaI

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Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Device Simulation of a Bidirectional Phase Control Thyristor

Popis výsledku v původním jazyce

The operation of Bidirectional Phase Control Thyristor (BiPCT) is analyzed using calibrated device simulation (TCAD). Because of too large high-voltage device domain for 3-D simulation, a special 2-D approach to turn the device from the forward blocking regime to the ON-state has been used. The calibration of the simulation is carried out from the ON-state IV curves and commutation turn-off waveforms measured on real devices produced on 100 mm silicon wafers. Both unirradiated and proton irradiated devices are covered. Two operation modes of the BiPCT are investigated in more details: a) AC switch turned on by single gate pulse remaining permanently in the ON-state, and b) bidirectional thyristor with as high commutation di/dt capability as possible.

Název v anglickém jazyce

Device Simulation of a Bidirectional Phase Control Thyristor

Popis výsledku anglicky

The operation of Bidirectional Phase Control Thyristor (BiPCT) is analyzed using calibrated device simulation (TCAD). Because of too large high-voltage device domain for 3-D simulation, a special 2-D approach to turn the device from the forward blocking regime to the ON-state has been used. The calibration of the simulation is carried out from the ON-state IV curves and commutation turn-off waveforms measured on real devices produced on 100 mm silicon wafers. Both unirradiated and proton irradiated devices are covered. Two operation modes of the BiPCT are investigated in more details: a) AC switch turned on by single gate pulse remaining permanently in the ON-state, and b) bidirectional thyristor with as high commutation di/dt capability as possible.

Druh

D - Stať ve sborníku

CEP obor

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OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

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Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

ISPS'25 PROCEEDINGS

ISBN

979-8-3315-5732-4

ISSN

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e-ISSN

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Počet stran výsledku

5

Strana od-do

155-159

Název nakladatele

Czech Technical University in Prague, Faculty of Electrical Engineering

Místo vydání

Prague

Místo konání akce

Praha

Datum konání akce

27. 8. 2025

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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