Layers of metals nanoparticles on various semiconductors for hydrogen detection

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F12%3A00377576" target="_blank" >RIV/68407700:21340/12:00377576 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.confer.cz/proceedings/nanocon/2012.pdf#page=142" target="_blank" >https://www.confer.cz/proceedings/nanocon/2012.pdf#page=142</a>

DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Layers of metals nanoparticles on various semiconductors for hydrogen detection

Popis výsledku v původním jazyce

Metal nanoparticles have many interesting properties which is given by their space restriction. Their large active surface is very well exploited during catalysis. Pd and Pt are metals know for their ability to dissociate molecular hydrogen on single atoms. We prepared Schottky diodes on semiconductors InP, GaN, GaAs, and InGaAs to obtain hydrogen sensor. Method of preparation such diodes is electrophoretic deposition of Pd or Pt nanoparticles from their colloid solution onto semiconductor substrate. Over the layer of nanoparticles, porous metal contact was prepared. Hydrogen molecules are dissociated on these metal nanoparticles and single atom which settles on the interface between metal and semiconductor and they increase or decrease Schottky barrier height. By this method we can measure from 1 ppm H-2 in the air, where the current change is over one order of magnitude. I-V measurements showed high rectification ratio of these structures and Shottky barrier height calculated from these measurements was high when compared to other methods of interface preparation. It points to very small Fermi level pinning, what is important prerequisite for hydrogen sensing. SEM measurements showed the layers were composed of small aggregates uniformly distributed on semiconductor surface. Size and number of these aggregates can be tuned by parameters of deposition.

Název v anglickém jazyce

Layers of metals nanoparticles on various semiconductors for hydrogen detection

Popis výsledku anglicky

Metal nanoparticles have many interesting properties which is given by their space restriction. Their large active surface is very well exploited during catalysis. Pd and Pt are metals know for their ability to dissociate molecular hydrogen on single atoms. We prepared Schottky diodes on semiconductors InP, GaN, GaAs, and InGaAs to obtain hydrogen sensor. Method of preparation such diodes is electrophoretic deposition of Pd or Pt nanoparticles from their colloid solution onto semiconductor substrate. Over the layer of nanoparticles, porous metal contact was prepared. Hydrogen molecules are dissociated on these metal nanoparticles and single atom which settles on the interface between metal and semiconductor and they increase or decrease Schottky barrier height. By this method we can measure from 1 ppm H-2 in the air, where the current change is over one order of magnitude. I-V measurements showed high rectification ratio of these structures and Shottky barrier height calculated from these measurements was high when compared to other methods of interface preparation. It points to very small Fermi level pinning, what is important prerequisite for hydrogen sensing. SEM measurements showed the layers were composed of small aggregates uniformly distributed on semiconductor surface. Size and number of these aggregates can be tuned by parameters of deposition.

Druh

D - Stať ve sborníku

CEP obor

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OECD FORD obor

21001 - Nano-materials (production and properties)

Projekt

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Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

NANOCON 2012, 4th International Conference

ISBN

978-80-87294-35-2

ISSN

2694-930X

e-ISSN

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Počet stran výsledku

5

Strana od-do

142-146

Název nakladatele

TANGER

Místo vydání

Ostrava

Místo konání akce

Brno

Datum konání akce

23. 10. 2012

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000333697100025