LAYERS OF METALS NANOPARTICLES ON VARIOUS SEMICONDUCTORS FOR HYDROGEN DETECTION

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F12%3A00387607" target="_blank" >RIV/67985882:_____/12:00387607 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

LAYERS OF METALS NANOPARTICLES ON VARIOUS SEMICONDUCTORS FOR HYDROGEN DETECTION

Popis výsledku v původním jazyce

Metal nanoparticles have many interesting properties which is given by their space restriction. Their large active surface is very well exploited during catalysis. Pd and Pt are metals know for their ability to dissociate molecular hydrogen on single atoms. We prepared Schottky diodes on semiconductors InP, GaN, GaAs, and InGaAs to obtain hydrogen sensor. Method of preparation such diodes is electrophoretic deposition of Pd or Pt nanoparticles from their colloid solution onto semiconductor substrate. Over the layer of nanoparticles, porous metal contact was prepared. Hydrogen molecules are dissociated on these metal nanoparticles and single atom which settles on the interface between metal and semiconductor and they increase or decrease Schottky barrier height. By this method we can measure from 1 ppm H2 in the air, where the current change is over one order of magnitude

Název v anglickém jazyce

LAYERS OF METALS NANOPARTICLES ON VARIOUS SEMICONDUCTORS FOR HYDROGEN DETECTION

Popis výsledku anglicky

Metal nanoparticles have many interesting properties which is given by their space restriction. Their large active surface is very well exploited during catalysis. Pd and Pt are metals know for their ability to dissociate molecular hydrogen on single atoms. We prepared Schottky diodes on semiconductors InP, GaN, GaAs, and InGaAs to obtain hydrogen sensor. Method of preparation such diodes is electrophoretic deposition of Pd or Pt nanoparticles from their colloid solution onto semiconductor substrate. Over the layer of nanoparticles, porous metal contact was prepared. Hydrogen molecules are dissociated on these metal nanoparticles and single atom which settles on the interface between metal and semiconductor and they increase or decrease Schottky barrier height. By this method we can measure from 1 ppm H2 in the air, where the current change is over one order of magnitude

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/GA102%2F09%2F1037" target="_blank" >GA102/09/1037: Kovové nanovrstvy pro senzorové a detektorové struktury na bázi polovodičů</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

NANOCON 2012, 4th International Conference Proceedings

ISBN

978-80-87294-32-1

ISSN

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e-ISSN

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Počet stran výsledku

6

Strana od-do

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Název nakladatele

TANGER Ltd

Místo vydání

Ostrava

Místo konání akce

Brno

Datum konání akce

23. 10. 2012

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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