Diamond Films Deposited by Oxygen-Enhanced Linear Plasma Chemistry
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F13%3A00211669" target="_blank" >RIV/68407700:21340/13:00211669 - isvavai.cz</a>
Výsledek na webu
—
DOI - Digital Object Identifier
—
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Diamond Films Deposited by Oxygen-Enhanced Linear Plasma Chemistry
Popis výsledku v původním jazyce
Diamond thin film growth over large area is mandatory for their industrial uses. Linear antenna microwave CVD process is novel method for growing diamond film at low pressure ranges (below 100 Pa) and low plasma temperature over large areas. Step-by-stepoptimizing gas mixture (CO2 and CH4) is required for fundamental understanding of the CVD diamond growth phenomena in such novel process. We show that adding CO2 to the methane/hydrogen gas mixture increases the growth rate up to 4 times and film quality also improves, as dedicated from Raman measurements. Electronic grade diamond films are successfully grown for lower CO2 and methane content in hydrogen and fabricated solution-gated field effect transistors are fully functional.
Název v anglickém jazyce
Diamond Films Deposited by Oxygen-Enhanced Linear Plasma Chemistry
Popis výsledku anglicky
Diamond thin film growth over large area is mandatory for their industrial uses. Linear antenna microwave CVD process is novel method for growing diamond film at low pressure ranges (below 100 Pa) and low plasma temperature over large areas. Step-by-stepoptimizing gas mixture (CO2 and CH4) is required for fundamental understanding of the CVD diamond growth phenomena in such novel process. We show that adding CO2 to the methane/hydrogen gas mixture increases the growth rate up to 4 times and film quality also improves, as dedicated from Raman measurements. Electronic grade diamond films are successfully grown for lower CO2 and methane content in hydrogen and fabricated solution-gated field effect transistors are fully functional.
Klasifikace
Druh
O - Ostatní výsledky
CEP obor
BH - Optika, masery a lasery
OECD FORD obor
—
Návaznosti výsledku
Projekt
—
Návaznosti
S - Specificky vyzkum na vysokych skolach
Ostatní
Rok uplatnění
2013
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů