Conductivity of boron-doped polycrystalline diamond films:

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F13%3A00214254" target="_blank" >RIV/68407700:21340/13:00214254 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21460/13:00214254

Výsledek na webu

<a href="http://link.springer.com/article/10.1140%2Fepjb%2Fe2013-40528-x" target="_blank" >http://link.springer.com/article/10.1140%2Fepjb%2Fe2013-40528-x</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1140/epjb/e2013-40528-x" target="_blank" >10.1140/epjb/e2013-40528-x</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Conductivity of boron-doped polycrystalline diamond films:

Popis výsledku v původním jazyce

The resistivity of boron doped polycrystalline diamond films changes with boron content in a very complex way with many unclear factors. From the large number of parameters affecting boron doped polycrystalline diamond film?s conductivity we focused on the role of boron atoms inside diamond grains in terms of boron contribution to the continuum of diamond electronic states. Using a combination of theoretical and experimental techniques (plane-wave Density Functional Theory, Neutron Depth Profiling, resistivity and Hall effect measurements, Atomic Force Microscopy and Raman spectroscopy) we studied a wide range of B defect parameters ? the boron concentration, location, structure, free hole concentration and mobility. The main goal and novelty of our work was to find the influence of B defects (structure, interactions, charge localisation and spins) in highly B-doped diamonds ? close or above the metal-insulator transition ? on the complex material charge transport mechanisms.

Název v anglickém jazyce

Conductivity of boron-doped polycrystalline diamond films:

Popis výsledku anglicky

The resistivity of boron doped polycrystalline diamond films changes with boron content in a very complex way with many unclear factors. From the large number of parameters affecting boron doped polycrystalline diamond film?s conductivity we focused on the role of boron atoms inside diamond grains in terms of boron contribution to the continuum of diamond electronic states. Using a combination of theoretical and experimental techniques (plane-wave Density Functional Theory, Neutron Depth Profiling, resistivity and Hall effect measurements, Atomic Force Microscopy and Raman spectroscopy) we studied a wide range of B defect parameters ? the boron concentration, location, structure, free hole concentration and mobility. The main goal and novelty of our work was to find the influence of B defects (structure, interactions, charge localisation and spins) in highly B-doped diamonds ? close or above the metal-insulator transition ? on the complex material charge transport mechanisms.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

The European Physical Journal B - Condensed Matter

ISSN

1434-6028

e-ISSN

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Svazek periodika

86

Číslo periodika v rámci svazku

10

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

10

Strana od-do

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Kód UT WoS článku

000326382200004

EID výsledku v databázi Scopus

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