New chemical pathway for large-area deposition of doped diamond films by linear antenna microwave plasma chemical vapor deposition

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00558649" target="_blank" >RIV/68378271:_____/22:00558649 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1016/j.diamond.2022.109111" target="_blank" >https://doi.org/10.1016/j.diamond.2022.109111</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.diamond.2022.109111" target="_blank" >10.1016/j.diamond.2022.109111</a>

Jazyk výsledku

angličtina

Název v původním jazyce

New chemical pathway for large-area deposition of doped diamond films by linear antenna microwave plasma chemical vapor deposition

Popis výsledku v původním jazyce

We present an implementation of a liquid-phase boron precursor trimethyl borate for large-area deposition of boron-doped diamond films by linear antenna microwave plasma CVD. Trimethyl borate vapors were used not only as a source of boron for doping but also as the only source of carbon and oxygen, while completely saturating the requirements for the growth of high-quality boron-doped diamond films. However, to allow for control over the doping level through maintaining the B/C and B/O ratios, carbon dioxide was employed as an additional source of carbon and oxygen. The film morphology was controllable from microcrystalline to ultrananocrystalline by changing the concentrations of trimethyl borate. Using this unique precursor system, we were able to grow diamond films with a doping level in range from 8 x 10e17 cm(-3) to 2 x 10e22 cm-3 and resistivity as low as 1.16 x 10e-2 omega.cm.

Název v anglickém jazyce

New chemical pathway for large-area deposition of doped diamond films by linear antenna microwave plasma chemical vapor deposition

Popis výsledku anglicky

We present an implementation of a liquid-phase boron precursor trimethyl borate for large-area deposition of boron-doped diamond films by linear antenna microwave plasma CVD. Trimethyl borate vapors were used not only as a source of boron for doping but also as the only source of carbon and oxygen, while completely saturating the requirements for the growth of high-quality boron-doped diamond films. However, to allow for control over the doping level through maintaining the B/C and B/O ratios, carbon dioxide was employed as an additional source of carbon and oxygen. The film morphology was controllable from microcrystalline to ultrananocrystalline by changing the concentrations of trimethyl borate. Using this unique precursor system, we were able to grow diamond films with a doping level in range from 8 x 10e17 cm(-3) to 2 x 10e22 cm-3 and resistivity as low as 1.16 x 10e-2 omega.cm.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20501 - Materials engineering

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Diamond and Related Materials

ISSN

0925-9635

e-ISSN

1879-0062

Svazek periodika

126

Číslo periodika v rámci svazku

June

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

9

Strana od-do

109111

Kód UT WoS článku

000811816400002

EID výsledku v databázi Scopus

2-s2.0-85131423983