Influence of temperature on Yb:YAG/Cr:YAG microchip laser operation

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F17%3A00315748" target="_blank" >RIV/68407700:21340/17:00315748 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1117/12.2252003" target="_blank" >http://dx.doi.org/10.1117/12.2252003</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1117/12.2252003" target="_blank" >10.1117/12.2252003</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Influence of temperature on Yb:YAG/Cr:YAG microchip laser operation

Popis výsledku v původním jazyce

The goal of this work was an investigation of the temperature influence (in range from 80 up to 320 K) on the laser properties of Yb: YAG/Cr: YAG Q-switched diode-pumped microchip laser. This laser was based on monolith crystal (diameter 3mm) which combines in one piece an active laser part (Yb: YAG crystal, 10 at.% Yb/Y, 3mm long) and saturable absorber (Cr: YAG crystal, 1.36mm long, initial transmission 90% @ 1031 nm). The laser resonator pump mirror (HT for pump radiation, HR for generated radiation) was directly deposited on the Yb: YAG monolith part. The output coupler with reflection 55% for the generated wavelength was placed on the Cr: YAG part. The microchip laser was placed in the temperature controlled cupreous holder inside vacuum chamber of the liquid nitrogen cryostat. For Yb: YAG part longitudinal pulsed pumping (pumping pulse length 2.5 ms, rep-rate 20 Hz, power amplitude 21W) a fibre coupled (core diameter 400 1 m, NA= 0 : 22) laser diode, operating at wavelength 933 nm, was used. The microchip laser mean output power, pulse duration, repetition rate, emission wavelength, and laser beam pro fi le were measured in dependence on temperature. The generated pulse length was in range from 2.2 ns to 1.1 ns (FWHM) with the minimum at 230 K. The single pulse energy was peaking (0.4 mJ) at 180 K. The highest peak power (325 kW) was obtained at 220 K. The highest pulse repetition rate (38 kHz) and output mean power (370mW) was reached for temperature 80 K.

Název v anglickém jazyce

Influence of temperature on Yb:YAG/Cr:YAG microchip laser operation

Popis výsledku anglicky

The goal of this work was an investigation of the temperature influence (in range from 80 up to 320 K) on the laser properties of Yb: YAG/Cr: YAG Q-switched diode-pumped microchip laser. This laser was based on monolith crystal (diameter 3mm) which combines in one piece an active laser part (Yb: YAG crystal, 10 at.% Yb/Y, 3mm long) and saturable absorber (Cr: YAG crystal, 1.36mm long, initial transmission 90% @ 1031 nm). The laser resonator pump mirror (HT for pump radiation, HR for generated radiation) was directly deposited on the Yb: YAG monolith part. The output coupler with reflection 55% for the generated wavelength was placed on the Cr: YAG part. The microchip laser was placed in the temperature controlled cupreous holder inside vacuum chamber of the liquid nitrogen cryostat. For Yb: YAG part longitudinal pulsed pumping (pumping pulse length 2.5 ms, rep-rate 20 Hz, power amplitude 21W) a fibre coupled (core diameter 400 1 m, NA= 0 : 22) laser diode, operating at wavelength 933 nm, was used. The microchip laser mean output power, pulse duration, repetition rate, emission wavelength, and laser beam pro fi le were measured in dependence on temperature. The generated pulse length was in range from 2.2 ns to 1.1 ns (FWHM) with the minimum at 230 K. The single pulse energy was peaking (0.4 mJ) at 180 K. The highest peak power (325 kW) was obtained at 220 K. The highest pulse repetition rate (38 kHz) and output mean power (370mW) was reached for temperature 80 K.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

<a href="/cs/project/TA03011141" target="_blank" >TA03011141: Velkoobjemové oxidické monokrystaly pro hi-tech optoelektronické aplikace</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proc. SPIE 10082 Solid State Lasers XXVI: Technology and Devices

ISBN

9781510606050

ISSN

0277-786X

e-ISSN

—

Počet stran výsledku

8

Strana od-do

—

Název nakladatele

SPIE

Místo vydání

Bellingham

Místo konání akce

San Francisco

Datum konání akce

28. 1. 2017

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000402427300059