A comparative study of the TID radiation effects on ASICs manufactured in 180 nm commercial technologies

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F18%3A00327024" target="_blank" >RIV/68407700:21340/18:00327024 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/18:00519329

Výsledek na webu

<a href="http://iopscience.iop.org/article/10.1088/1748-0221/13/12/C12003/meta" target="_blank" >http://iopscience.iop.org/article/10.1088/1748-0221/13/12/C12003/meta</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1748-0221/13/12/C12003" target="_blank" >10.1088/1748-0221/13/12/C12003</a>

Jazyk výsledku

angličtina

Název v původním jazyce

A comparative study of the TID radiation effects on ASICs manufactured in 180 nm commercial technologies

Popis výsledku v původním jazyce

The presented study compares the effects of ionizing radiation on circuit structures manufactured in a 180 nm bulk CMOS and 180 nm SoI MOS technology. Ahigh-flux Co-60 medical radiation source with a dose rate of 460 Gy.min(-1) was used. The specimens under irradiation were placed in a Pb/Al enclosure providing an approximate electron equilibrium. Besides the analog and digital circuits, the ASICs also contain transistor test structures for direct study of irradiation effects upon electronics. The integral characteristics of current consumption, shifts in transistor threshold voltage and leakage current increase observations have been made. The SoI technology was shown to be several orders of magnitude more sensitive to TID effects, but during irradiation, its properties had a tendency to return to normal.

Název v anglickém jazyce

A comparative study of the TID radiation effects on ASICs manufactured in 180 nm commercial technologies

Popis výsledku anglicky

The presented study compares the effects of ionizing radiation on circuit structures manufactured in a 180 nm bulk CMOS and 180 nm SoI MOS technology. Ahigh-flux Co-60 medical radiation source with a dose rate of 460 Gy.min(-1) was used. The specimens under irradiation were placed in a Pb/Al enclosure providing an approximate electron equilibrium. Besides the analog and digital circuits, the ASICs also contain transistor test structures for direct study of irradiation effects upon electronics. The integral characteristics of current consumption, shifts in transistor threshold voltage and leakage current increase observations have been made. The SoI technology was shown to be several orders of magnitude more sensitive to TID effects, but during irradiation, its properties had a tendency to return to normal.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10301 - Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)

Projekt

<a href="/cs/project/TE01020069" target="_blank" >TE01020069: Progresívní detekční systémy ionizujícího záření</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Instrumentation

ISSN

1748-0221

e-ISSN

1748-0221

Svazek periodika

13

Číslo periodika v rámci svazku

December

Stát vydavatele periodika

IT - Italská republika

Počet stran výsledku

9

Strana od-do

—

Kód UT WoS článku

000452462800002

EID výsledku v databázi Scopus

2-s2.0-85059889718