Temperature Influence on Microchip Lasers Based on Nd:YAG Crystal

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F19%3A00334023" target="_blank" >RIV/68407700:21340/19:00334023 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1117/12.2509507" target="_blank" >http://dx.doi.org/10.1117/12.2509507</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1117/12.2509507" target="_blank" >10.1117/12.2509507</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Temperature Influence on Microchip Lasers Based on Nd:YAG Crystal

Popis výsledku v původním jazyce

The influence of temperature (from 80 up to 400 K) on emission of microchip lasers based on Nd:YAG crystal together with its spectroscopic properties was investigated. Three microchip lasers primarily designed for emission at 1.06, 1.32, and 1.44 um, were tested. For all three lasers, the same parameters of Nd:YAG rod were used (Nd-doping 0.9 at.% Nd/Y, length of 5 mm, diameter 5 mm). Resonator mirrors were deposited directly on the laser crystal faces. The output coupler transmission for desired wavelength was 2-5 %. The microchip lasers were placed in the temperature controlled cupreous holder inside vacuum chamber of the liquid nitrogen cryostat. The lasers were longitudinally pumped by 808nm fibre-coupled pulsed laser diode. The output microchip laser emission wavelength, laser threshold, laser slope efficiency, and laser beam profile were measured in temperature range from 80 up to 400 K. For all three samples the best results were obtained for temperature in range 200-250 K.

Název v anglickém jazyce

Temperature Influence on Microchip Lasers Based on Nd:YAG Crystal

Popis výsledku anglicky

The influence of temperature (from 80 up to 400 K) on emission of microchip lasers based on Nd:YAG crystal together with its spectroscopic properties was investigated. Three microchip lasers primarily designed for emission at 1.06, 1.32, and 1.44 um, were tested. For all three lasers, the same parameters of Nd:YAG rod were used (Nd-doping 0.9 at.% Nd/Y, length of 5 mm, diameter 5 mm). Resonator mirrors were deposited directly on the laser crystal faces. The output coupler transmission for desired wavelength was 2-5 %. The microchip lasers were placed in the temperature controlled cupreous holder inside vacuum chamber of the liquid nitrogen cryostat. The lasers were longitudinally pumped by 808nm fibre-coupled pulsed laser diode. The output microchip laser emission wavelength, laser threshold, laser slope efficiency, and laser beam profile were measured in temperature range from 80 up to 400 K. For all three samples the best results were obtained for temperature in range 200-250 K.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

<a href="/cs/project/FV10124" target="_blank" >FV10124: Nové laserové tyče a disky pro moderní diodově čerpané lasery</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proc. SPIE 10896 Solid State Lasers XXVIII: Technology and Devices

ISBN

978-1-5106-2434-4

ISSN

0277-786X

e-ISSN

—

Počet stran výsledku

10

Strana od-do

—

Název nakladatele

SPIE

Místo vydání

Bellingham

Místo konání akce

San Francisco

Datum konání akce

2. 2. 2019

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000483062600043