Simulation of charge sharing effects in 70 μm pixelated CdTe sensor

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F22%3A00354672" target="_blank" >RIV/68407700:21340/22:00354672 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21230/22:00354672

Výsledek na webu

<a href="https://iopscience.iop.org/article/10.1088/1742-6596/2374/1/012130" target="_blank" >https://iopscience.iop.org/article/10.1088/1742-6596/2374/1/012130</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1742-6596/2374/1/012130" target="_blank" >10.1088/1742-6596/2374/1/012130</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Simulation of charge sharing effects in 70 μm pixelated CdTe sensor

Popis výsledku v původním jazyce

Pixel detectors become an integral part of medical imaging, nondestructive testing, space science and particle physics. Sensors that are bump bonded to readout ASICs are made from various materials such as GaAs, Si, CdTe, and CdZnTe. Current research tends to use CdTe/CdZnTe as gamma-ray sensors due to its high absorption coefficient in the gamma spectrum. With decreasing size of pixel pitch, charge diffusion and secondary fluorescent photons cause charge sharing between neighboring pixels. That decreases the spatial and spectral resolution of the detector. This study simulated the effects of charge diffusion in a 2 mm thick 70 μm pixelated CdTe using TCAD. We created a 3D model of the sensor with an array of 5 x 5 pixels. We simulated the propagation of e-h pairs generated upon the absorption of gamma photons in CdTe. Based on the simulation outcome, we calculated the collection time, drift time and pixel capacitance. Finally, we propose a sensor model for use in analog front-end design.

Název v anglickém jazyce

Simulation of charge sharing effects in 70 μm pixelated CdTe sensor

Popis výsledku anglicky

Pixel detectors become an integral part of medical imaging, nondestructive testing, space science and particle physics. Sensors that are bump bonded to readout ASICs are made from various materials such as GaAs, Si, CdTe, and CdZnTe. Current research tends to use CdTe/CdZnTe as gamma-ray sensors due to its high absorption coefficient in the gamma spectrum. With decreasing size of pixel pitch, charge diffusion and secondary fluorescent photons cause charge sharing between neighboring pixels. That decreases the spatial and spectral resolution of the detector. This study simulated the effects of charge diffusion in a 2 mm thick 70 μm pixelated CdTe using TCAD. We created a 3D model of the sensor with an array of 5 x 5 pixels. We simulated the propagation of e-h pairs generated upon the absorption of gamma photons in CdTe. Based on the simulation outcome, we calculated the collection time, drift time and pixel capacitance. Finally, we propose a sensor model for use in analog front-end design.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

10301 - Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)

Projekt

<a href="/cs/project/EF16_019%2F0000778" target="_blank" >EF16_019/0000778: Centrum pokročilých aplikovaných přírodních věd</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Journal of Physics: Conference Series

ISBN

—

ISSN

1742-6588

e-ISSN

1742-6596

Počet stran výsledku

4

Strana od-do

1-4

Název nakladatele

IOP Institute of Physics

Místo vydání

Bristol

Místo konání akce

online, orig. Whistler, British Columbia

Datum konání akce

23. 5. 2021

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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