Thin Film Limit Correction Method to the Surface Defective Layer in Low Absorption Spectroscopy

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21460%2F15%3A00241298" target="_blank" >RIV/68407700:21460/15:00241298 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1166/asem.2015.1699" target="_blank" >http://dx.doi.org/10.1166/asem.2015.1699</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1166/asem.2015.1699" target="_blank" >10.1166/asem.2015.1699</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Thin Film Limit Correction Method to the Surface Defective Layer in Low Absorption Spectroscopy

Popis výsledku v původním jazyce

We derive the so-called thin-film limit correction method to the surface defective layer in a low absorption spectroscopy as a novel approach to formulae for transmittance (T ), reflectance (R) and absorptance (A) in highly versatile and accurate form. We draw attention to two remarkable consequences of the thin-film limit: (i) The optical properties depend on the product of the absorption coefficient, thickness and refraction index. (ii) The absorptance strongly depends on the index of refraction of the surrounding media. Based on these assumptions a new method is presented that allows direct evaluation of ultrathin surface defective layer absorptance. This presents a direct and elegant way avoiding complex evaluation of surface defective layer. Finally, we perform experimental verification on hydrogenated amorphous silicon (a-Si:H) thin films and we show that the optical absorption of the double layer of undoped thin film layer coated with the ultrathin doped layer is higher then the

Název v anglickém jazyce

Thin Film Limit Correction Method to the Surface Defective Layer in Low Absorption Spectroscopy

Popis výsledku anglicky

We derive the so-called thin-film limit correction method to the surface defective layer in a low absorption spectroscopy as a novel approach to formulae for transmittance (T ), reflectance (R) and absorptance (A) in highly versatile and accurate form. We draw attention to two remarkable consequences of the thin-film limit: (i) The optical properties depend on the product of the absorption coefficient, thickness and refraction index. (ii) The absorptance strongly depends on the index of refraction of the surrounding media. Based on these assumptions a new method is presented that allows direct evaluation of ultrathin surface defective layer absorptance. This presents a direct and elegant way avoiding complex evaluation of surface defective layer. Finally, we perform experimental verification on hydrogenated amorphous silicon (a-Si:H) thin films and we show that the optical absorption of the double layer of undoped thin film layer coated with the ultrathin doped layer is higher then the

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

—

Projekt

—

Návaznosti

V - Vyzkumna aktivita podporovana z jinych verejnych zdroju

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Advanced Science, Engineering and Medicine

ISSN

2164-6635

e-ISSN

—

Svazek periodika

7

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

4

Strana od-do

343-346

Kód UT WoS článku

—

EID výsledku v databázi Scopus

—