Multiple-Input Bulk-Driven MOS Transistor for Low-Voltage Low-Frequency Applications

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21460%2F19%3A00340729" target="_blank" >RIV/68407700:21460/19:00340729 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216305:26220/19:PU129825

Výsledek na webu

<a href="https://doi.org/10.1007/s00034-018-0999-x" target="_blank" >https://doi.org/10.1007/s00034-018-0999-x</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s00034-018-0999-x" target="_blank" >10.1007/s00034-018-0999-x</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Multiple-Input Bulk-Driven MOS Transistor for Low-Voltage Low-Frequency Applications

Popis výsledku v původním jazyce

This brief presents the principle and the first experimental results of the multiple-input bulk-driven (MIBD) MOS transistor (MOST) suitable for extremely low-voltage low-power integrated circuits. The MIBD MOST offers significant reduction in circuit complexity, power consumption and extension of the input common-mode range (ICMR). To confirm the benefits of the MIBD MOST, a differential difference amplifier (DDA) with very simple CMOS topology has been designed and fabricated in a standard n-well 0.18 mu m CMOS process from TSMC with total chip area 226 mu mx78 mu m. The DDA is supplied with 0.5V and consumed only 1.23 mu W, while the ICMR is rail-to-rail. The measured open-loop dc gain is 62dB, the gain bandwidth product is 56.4kHz, and the total harmonic distortion is 0.2% @ 1kHz for 400mV peak-to-peak input sine wave.

Název v anglickém jazyce

Multiple-Input Bulk-Driven MOS Transistor for Low-Voltage Low-Frequency Applications

Popis výsledku anglicky

This brief presents the principle and the first experimental results of the multiple-input bulk-driven (MIBD) MOS transistor (MOST) suitable for extremely low-voltage low-power integrated circuits. The MIBD MOST offers significant reduction in circuit complexity, power consumption and extension of the input common-mode range (ICMR). To confirm the benefits of the MIBD MOST, a differential difference amplifier (DDA) with very simple CMOS topology has been designed and fabricated in a standard n-well 0.18 mu m CMOS process from TSMC with total chip area 226 mu mx78 mu m. The DDA is supplied with 0.5V and consumed only 1.23 mu W, while the ICMR is rail-to-rail. The measured open-loop dc gain is 62dB, the gain bandwidth product is 56.4kHz, and the total harmonic distortion is 0.2% @ 1kHz for 400mV peak-to-peak input sine wave.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Circuits, Systems, and Signal Processing

ISSN

0278-081X

e-ISSN

1531-5878

Svazek periodika

38

Číslo periodika v rámci svazku

6

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

17

Strana od-do

2829-2845

Kód UT WoS článku

000468147600019

EID výsledku v databázi Scopus

2-s2.0-85065919435