X-ray Based Methods for 3D Characterization of Charge Collection and Homogeneity of Sensors with the Use of Timepix Chip

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21670%2F11%3A00191525" target="_blank" >RIV/68407700:21670/11:00191525 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1109/NSSMIC.2011.6154764" target="_blank" >http://dx.doi.org/10.1109/NSSMIC.2011.6154764</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/NSSMIC.2011.6154764" target="_blank" >10.1109/NSSMIC.2011.6154764</a>

Jazyk výsledku

angličtina

Název v původním jazyce

X-ray Based Methods for 3D Characterization of Charge Collection and Homogeneity of Sensors with the Use of Timepix Chip

Popis výsledku v původním jazyce

Timepix is a universal readout chip for pixel detectors which can be connected to various semiconductor sensors. The device has a 256x256 matrix of square pixels with a pitch of 55 ?m. Every single pixel is able to measure the collected charge. The traditional material used for sensors is monocrystalline silicon (Si). However, other materials such as gallium arsenide (GaAs) or cadmium telluride (CdTe) are applicable as well. To describe the properties of the sensors it is important to probe and evaluatethe charge collection efficiency and its homogeneity across sensor area (or if possible even in its volume). A probing technique utilizing X-ray radiation applicable for different sensor materials has been designed. A collimated narrow line beam is applied to perform the 3D characterization of the sensor volume. When the parallel beam hits the sensor at small angles it penetrates the adjacent pixels at different but known depths. This technique enables us to record the charge collection

Název v anglickém jazyce

X-ray Based Methods for 3D Characterization of Charge Collection and Homogeneity of Sensors with the Use of Timepix Chip

Popis výsledku anglicky

Timepix is a universal readout chip for pixel detectors which can be connected to various semiconductor sensors. The device has a 256x256 matrix of square pixels with a pitch of 55 ?m. Every single pixel is able to measure the collected charge. The traditional material used for sensors is monocrystalline silicon (Si). However, other materials such as gallium arsenide (GaAs) or cadmium telluride (CdTe) are applicable as well. To describe the properties of the sensors it is important to probe and evaluatethe charge collection efficiency and its homogeneity across sensor area (or if possible even in its volume). A probing technique utilizing X-ray radiation applicable for different sensor materials has been designed. A collimated narrow line beam is applied to perform the 3D characterization of the sensor volume. When the parallel beam hits the sensor at small angles it penetrates the adjacent pixels at different but known depths. This technique enables us to record the charge collection

Druh

D - Stať ve sborníku

CEP obor

BG - Jaderná, atomová a molekulová fyzika, urychlovače

OECD FORD obor

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Projekt

<a href="/cs/project/LC06041" target="_blank" >LC06041: Příprava, modifikace a charakterizace materiálů energetickým zářením</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

IEEE Nuclear Science Symposium and Medical Imaging Conference 2011

ISBN

978-1-4673-0118-3

ISSN

1082-3654

e-ISSN

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Počet stran výsledku

4

Strana od-do

4711-4714

Název nakladatele

Omnipress

Místo vydání

Piscataway, New Jersey

Místo konání akce

Valencia

Datum konání akce

23. 10. 2011

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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