Probe and scanning system for 3D response mapping of pixelated semiconductor detector with X-rays and the timepix device

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21670%2F12%3A00191728" target="_blank" >RIV/68407700:21670/12:00191728 - isvavai.cz</a>

Výsledek na webu

<a href="http://proceedings.aip.org/resource/2/apcpcs/1423/1/461_1" target="_blank" >http://proceedings.aip.org/resource/2/apcpcs/1423/1/461_1</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/1.3688846" target="_blank" >10.1063/1.3688846</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Probe and scanning system for 3D response mapping of pixelated semiconductor detector with X-rays and the timepix device

Popis výsledku v původním jazyce

development of new radiation detectors of different semiconductor materials (Si, CdTe, GaAs, ...) brings the necessity to test and evaluate their response and detection performance such as the spatial homogeneity and local charge collection efficiency. Anumber of these materials exhibit a certain degree of inhomogeneity, which is needed to be determined in order to eliminate its negative effects. Similarly, such testing is desired as well in order to determine the extent of radiation damage in detectors. We decided to build a size-configurable beam and detector positioning system to probe the collection of charge spatially localized deposited by X-rays on a pixelated detector. The principle of this system is based on the use of a collimated parallel X-ray beam with a line profile, which delivers a defined charge at a specific location in 3D in the sensor. The beam can be sent onto the pixelated sensor at a low angle, which allows determining, for a given angle and detector position, t

Název v anglickém jazyce

Probe and scanning system for 3D response mapping of pixelated semiconductor detector with X-rays and the timepix device

Popis výsledku anglicky

development of new radiation detectors of different semiconductor materials (Si, CdTe, GaAs, ...) brings the necessity to test and evaluate their response and detection performance such as the spatial homogeneity and local charge collection efficiency. Anumber of these materials exhibit a certain degree of inhomogeneity, which is needed to be determined in order to eliminate its negative effects. Similarly, such testing is desired as well in order to determine the extent of radiation damage in detectors. We decided to build a size-configurable beam and detector positioning system to probe the collection of charge spatially localized deposited by X-rays on a pixelated detector. The principle of this system is based on the use of a collimated parallel X-ray beam with a line profile, which delivers a defined charge at a specific location in 3D in the sensor. The beam can be sent onto the pixelated sensor at a low angle, which allows determining, for a given angle and detector position, t

Druh

D - Stať ve sborníku

CEP obor

BG - Jaderná, atomová a molekulová fyzika, urychlovače

OECD FORD obor

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Projekt

<a href="/cs/project/LC06041" target="_blank" >LC06041: Příprava, modifikace a charakterizace materiálů energetickým zářením</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

IX LATIN AMERICAN SYMPOSIUM ON NUCLEAR PHYSICS AND APPLICATIONS

ISBN

978-0-7354-1003-9

ISSN

0094-243X

e-ISSN

—

Počet stran výsledku

6

Strana od-do

461-466

Název nakladatele

American Institute of Physics

Místo vydání

Melville, New York

Místo konání akce

Quito

Datum konání akce

18. 7. 2011

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000302767500073