Processing and characterization of edgeless radiation detectors for large area detection

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21670%2F13%3A00215991" target="_blank" >RIV/68407700:21670/13:00215991 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.nima.2013.06.097" target="_blank" >http://dx.doi.org/10.1016/j.nima.2013.06.097</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.nima.2013.06.097" target="_blank" >10.1016/j.nima.2013.06.097</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Processing and characterization of edgeless radiation detectors for large area detection

Popis výsledku v původním jazyce

The edgeless or active edge silicon pixel detectors have been gaining a lot of interest due to improved silicon processing capabilities. At VTT, we have recently triggered a multi-project wafer process of edgeless silicon detectors. Totally 80 pieces of150 mm wafers were processed to provide a given number of detector variations. Fabricated detector thicknesses were 100, 200, 300 and 500 ?m. The polarities of the fabricated detectors on the given thicknesses were n-in-n, p-in-n, n-in-p and p-in-p. On the n-in-n and n-in-p wafers the pixel isolation was made either with a common p-stop grid or with a shallow p-spray doping. The wafer materials were high resistivity Float Zone and Magnetic Czochralski silicon with crystal orientation of <100>. In this paper, the electric properties on various types of detectors are presented. The results from spectroscopic measurement show a good energy resolution of the edge pixels, indicating an excellent charge collection near the edge pixels of the

Název v anglickém jazyce

Processing and characterization of edgeless radiation detectors for large area detection

Popis výsledku anglicky

The edgeless or active edge silicon pixel detectors have been gaining a lot of interest due to improved silicon processing capabilities. At VTT, we have recently triggered a multi-project wafer process of edgeless silicon detectors. Totally 80 pieces of150 mm wafers were processed to provide a given number of detector variations. Fabricated detector thicknesses were 100, 200, 300 and 500 ?m. The polarities of the fabricated detectors on the given thicknesses were n-in-n, p-in-n, n-in-p and p-in-p. On the n-in-n and n-in-p wafers the pixel isolation was made either with a common p-stop grid or with a shallow p-spray doping. The wafer materials were high resistivity Float Zone and Magnetic Czochralski silicon with crystal orientation of <100>. In this paper, the electric properties on various types of detectors are presented. The results from spectroscopic measurement show a good energy resolution of the edge pixels, indicating an excellent charge collection near the edge pixels of the

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BG - Jaderná, atomová a molekulová fyzika, urychlovače

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nuclear Instruments and Methods in Physics Research, Section A, Accelerators, Spectrometers, Detectors and Associated Equipment

ISSN

0168-9002

e-ISSN

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Svazek periodika

731

Číslo periodika v rámci svazku

731

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

5

Strana od-do

205-209

Kód UT WoS článku

000327487500040

EID výsledku v databázi Scopus

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