Characterization of thin p-on-p radiation detectors with active edges

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21670%2F16%3A00240459" target="_blank" >RIV/68407700:21670/16:00240459 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.nima.2016.01.016" target="_blank" >http://dx.doi.org/10.1016/j.nima.2016.01.016</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.nima.2016.01.016" target="_blank" >10.1016/j.nima.2016.01.016</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Characterization of thin p-on-p radiation detectors with active edges

Popis výsledku v původním jazyce

Active edge p-on-p silicon pixel detectors with thickness of 100 mu m were fabricated on 150 mm float zone silicon wafers at VTT. By combining measured results and TCAD simulations, a detailed study of electric field distributions and charge collection performances as a function of applied voltage in a p-on-p detector was carried out. A comparison with the results of a more conventional active edge p-on-n pixel sensor is presented. The results from 3D spatial mapping show that at pixel-to-edge distances less than 100 mu m the sensitive volume is extended to the physical edge of the detector when the applied voltage is above full depletion. The results from a spectroscopic measurement demonstrate a good functionality of the edge pixels. The interpixel isolation above full depletion and the breakdown voltage were found to be equal to the p-on-n sensor while lower charge collection was observed in the p-on-p pixel sensor below 80 V. Simulations indicated this to be partly a result of a more favourable weighting field in the p-on-n sensor and partly of lower hole lifetimes in the p-bulk.

Název v anglickém jazyce

Characterization of thin p-on-p radiation detectors with active edges

Popis výsledku anglicky

Active edge p-on-p silicon pixel detectors with thickness of 100 mu m were fabricated on 150 mm float zone silicon wafers at VTT. By combining measured results and TCAD simulations, a detailed study of electric field distributions and charge collection performances as a function of applied voltage in a p-on-p detector was carried out. A comparison with the results of a more conventional active edge p-on-n pixel sensor is presented. The results from 3D spatial mapping show that at pixel-to-edge distances less than 100 mu m the sensitive volume is extended to the physical edge of the detector when the applied voltage is above full depletion. The results from a spectroscopic measurement demonstrate a good functionality of the edge pixels. The interpixel isolation above full depletion and the breakdown voltage were found to be equal to the p-on-n sensor while lower charge collection was observed in the p-on-p pixel sensor below 80 V. Simulations indicated this to be partly a result of a more favourable weighting field in the p-on-n sensor and partly of lower hole lifetimes in the p-bulk.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BG - Jaderná, atomová a molekulová fyzika, urychlovače

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nuclear Instruments and Methods in Physics Research, Section A, Accelerators, Spectrometers, Detectors and Associated Equipment

ISSN

0168-9002

e-ISSN

—

Svazek periodika

813

Číslo periodika v rámci svazku

813

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

8

Strana od-do

139-146

Kód UT WoS článku

000369369000017

EID výsledku v databázi Scopus

2-s2.0-84956996604