3D active edge silicon sensors with different electrode configurations: Radiation hardness and noise performance

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21670%2F09%3A00165980" target="_blank" >RIV/68407700:21670/09:00165980 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

3D active edge silicon sensors with different electrode configurations: Radiation hardness and noise performance

Popis výsledku v původním jazyce

3D detectors, with electrodes penetrating the entire silicon wafer and active edges, were fabricated at the Stanford Nano Fabrication Facility (SNF), California, USA, with different electrode configurations. After irradiation with neutrons up to a fluence of 8.8 x 10(15) n(eq)cm(-2), they were characterised using an infrared laser tuned to inject similar to 2 minimum ionising particles showing signal efficiencies as high as 66% for the configuration with the shortest (56 mu m) inter-electrode spacing. Sensors from the same wafer were also bump-bonded to the ATLAS FE-13 pixel readout chip and their noise characterised. Most probable signal-to-noise ratios were calculated before and after irradiation to be as good as 38:1 after the highest irradiation level with a substrate thickness of 210 mu m. These devices are promising candidates for application at the LHC such as the very forward detectors at ATLAS and CMS, the ATLAS B-Layer replacement and the general pixel upgrade.

Název v anglickém jazyce

3D active edge silicon sensors with different electrode configurations: Radiation hardness and noise performance

Popis výsledku anglicky

3D detectors, with electrodes penetrating the entire silicon wafer and active edges, were fabricated at the Stanford Nano Fabrication Facility (SNF), California, USA, with different electrode configurations. After irradiation with neutrons up to a fluence of 8.8 x 10(15) n(eq)cm(-2), they were characterised using an infrared laser tuned to inject similar to 2 minimum ionising particles showing signal efficiencies as high as 66% for the configuration with the shortest (56 mu m) inter-electrode spacing. Sensors from the same wafer were also bump-bonded to the ATLAS FE-13 pixel readout chip and their noise characterised. Most probable signal-to-noise ratios were calculated before and after irradiation to be as good as 38:1 after the highest irradiation level with a substrate thickness of 210 mu m. These devices are promising candidates for application at the LHC such as the very forward detectors at ATLAS and CMS, the ATLAS B-Layer replacement and the general pixel upgrade.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BG - Jaderná, atomová a molekulová fyzika, urychlovače

OECD FORD obor

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Projekt

<a href="/cs/project/LA08015" target="_blank" >LA08015: Spolupráce ČR s CERN</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2009

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nuclear Instruments and Methods in Physics Research, Section A, Accelerators, Spectrometers, Detectors and Associated Equipment

ISSN

0168-9002

e-ISSN

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Svazek periodika

2009

Číslo periodika v rámci svazku

604

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

7

Strana od-do

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Kód UT WoS článku

000267198700011

EID výsledku v databázi Scopus

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