Homogeneity study of a GaAs:Cr pixelated sensor by means of X-rays

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21670%2F18%3A00329980" target="_blank" >RIV/68407700:21670/18:00329980 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1088/1748-0221/13/04/P04002" target="_blank" >http://dx.doi.org/10.1088/1748-0221/13/04/P04002</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1748-0221/13/04/P04002" target="_blank" >10.1088/1748-0221/13/04/P04002</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Homogeneity study of a GaAs:Cr pixelated sensor by means of X-rays

Popis výsledku v původním jazyce

Direct conversion semiconductor detectors have become an indispensable tool in radiation detection by now. In order to obtain a high detection efficiency, especially when detecting X or gamma rays, high-Z semiconductor sensors are necessary. Like other compound semiconductors GaAs, compensated by chromium (GaAs:Cr), suffers from a number of defects that affect the charge collection efficiency and homogeneity of the material. A precise knowledge of this problem is important to predict the performance of such detectors and eventually correct their response in specific applications. In this study we analyse the homogeneity and mobility-lifetime products (mu(e)tau(e)) of a 500 mu m thick GaAs:Cr pixelated sensor connected to a Timepix chip. The detector is irradiated by 23 keV X-rays, each pixel recording the number of photon interactions and the charge they induce on its electrode. The mu(e)tau(e) products are extracted on a per-pixel basis, using the Hecht equation corrected for the small pixel effect. The detector shows a good time stability in the experimental conditions. Significant inhomogeneities are observed in photon counting and charge collection efficiencies. An average mu(e)tau(e) of 1.0.10(-4) cm(2) V-1 is found, and compared with values obtained by other methods for the same material. Solutions to improve the response are discussed.

Název v anglickém jazyce

Homogeneity study of a GaAs:Cr pixelated sensor by means of X-rays

Popis výsledku anglicky

Direct conversion semiconductor detectors have become an indispensable tool in radiation detection by now. In order to obtain a high detection efficiency, especially when detecting X or gamma rays, high-Z semiconductor sensors are necessary. Like other compound semiconductors GaAs, compensated by chromium (GaAs:Cr), suffers from a number of defects that affect the charge collection efficiency and homogeneity of the material. A precise knowledge of this problem is important to predict the performance of such detectors and eventually correct their response in specific applications. In this study we analyse the homogeneity and mobility-lifetime products (mu(e)tau(e)) of a 500 mu m thick GaAs:Cr pixelated sensor connected to a Timepix chip. The detector is irradiated by 23 keV X-rays, each pixel recording the number of photon interactions and the charge they induce on its electrode. The mu(e)tau(e) products are extracted on a per-pixel basis, using the Hecht equation corrected for the small pixel effect. The detector shows a good time stability in the experimental conditions. Significant inhomogeneities are observed in photon counting and charge collection efficiencies. An average mu(e)tau(e) of 1.0.10(-4) cm(2) V-1 is found, and compared with values obtained by other methods for the same material. Solutions to improve the response are discussed.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10303 - Particles and field physics

Projekt

<a href="/cs/project/EF16_019%2F0000766" target="_blank" >EF16_019/0000766: Inženýrské aplikace fyziky mikrosvěta</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Instrumentation

ISSN

1748-0221

e-ISSN

1748-0221

Svazek periodika

13

Číslo periodika v rámci svazku

P04002

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

13

Strana od-do

—

Kód UT WoS článku

000429055400002

EID výsledku v databázi Scopus

2-s2.0-85046637366