3D imaging of radiation damage in silicon sensor and spatial mapping of charge collection efficiency

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21670%2F13%3A00215514" target="_blank" >RIV/68407700:21670/13:00215514 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/61389005:_____/13:00392289

Výsledek na webu

<a href="http://iopscience.iop.org/1748-0221/8/03/C03023/" target="_blank" >http://iopscience.iop.org/1748-0221/8/03/C03023/</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1748-0221/8/03/C03023" target="_blank" >10.1088/1748-0221/8/03/C03023</a>

Jazyk výsledku

angličtina

Název v původním jazyce

3D imaging of radiation damage in silicon sensor and spatial mapping of charge collection efficiency

Popis výsledku v původním jazyce

Radiation damage in semiconductor sensors alters the response and degrades the performance of many devices ultimately limiting their stability and lifetime. In semiconductor radiation detectors the homogeneity of charge collection becomes distorted whiledecreasing the overall detection efficiency. Moreover the damage can significantly increase the detector noise and degrade other electrical properties such as leakage current. In this work we present a novel method for 3D mapping of the semiconductor radiation sensor volume allowing displaying the three dimensional distribution of detector properties such as charge collection efficiency and charge diffusion rate. This technique can visualize the spatially localized changes of local detector performanceafter radiation damage. Sensors used were 300 mu m and 1000 mu m thick silicon bump-bonded to a Timepix readout chip which serves as an imaging multichannel microprobe (256 x 256 square pixels with pitch of 55 mu m, i.e. all together 65

Název v anglickém jazyce

3D imaging of radiation damage in silicon sensor and spatial mapping of charge collection efficiency

Popis výsledku anglicky

Radiation damage in semiconductor sensors alters the response and degrades the performance of many devices ultimately limiting their stability and lifetime. In semiconductor radiation detectors the homogeneity of charge collection becomes distorted whiledecreasing the overall detection efficiency. Moreover the damage can significantly increase the detector noise and degrade other electrical properties such as leakage current. In this work we present a novel method for 3D mapping of the semiconductor radiation sensor volume allowing displaying the three dimensional distribution of detector properties such as charge collection efficiency and charge diffusion rate. This technique can visualize the spatially localized changes of local detector performanceafter radiation damage. Sensors used were 300 mu m and 1000 mu m thick silicon bump-bonded to a Timepix readout chip which serves as an imaging multichannel microprobe (256 x 256 square pixels with pitch of 55 mu m, i.e. all together 65

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BG - Jaderná, atomová a molekulová fyzika, urychlovače

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Instrumentation

ISSN

1748-0221

e-ISSN

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Svazek periodika

8

Číslo periodika v rámci svazku

03

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

10

Strana od-do

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Kód UT WoS článku

000316990700023

EID výsledku v databázi Scopus

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