Evaluation of local radiation damage in silicon sensor via charge collection mapping with the Timepix read-out chip

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F13%3A00392531" target="_blank" >RIV/61389005:_____/13:00392531 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21670/13:00215465

Výsledek na webu

<a href="http://dx.doi.org/10.1088/1748-0221/8/04/C04001" target="_blank" >http://dx.doi.org/10.1088/1748-0221/8/04/C04001</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1748-0221/8/04/C04001" target="_blank" >10.1088/1748-0221/8/04/C04001</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Evaluation of local radiation damage in silicon sensor via charge collection mapping with the Timepix read-out chip

Popis výsledku v původním jazyce

Studies of radiation hardness of silicon sensors are standardly performed with single-pad detectors evaluating their global electrical properties. In this work we introduce a technique to visualize and determine the spatial distribution of radiation damage across the area of a semiconductor sensor. The sensor properties such as charge collection efficiency and charge diffusion were evaluated locally at many points of the sensor creating 2D maps. For this purpose we used a silicon sensor bump bonded to the pixelated Timepix read-out chip. This device, operated in Time-over-threshold (TOT) mode, allows for the direct energy measurement in each pixel. Selected regions of the sensor were intentionally damaged by defined doses (up to 10(12) particles/cm(2))of energetic protons (of 2.5 and 4 MeV). The extent of the damage was measured in terms of the detector response to the same ions. This procedure was performed either on-line during irradiation or off-line after it. The response of the d

Název v anglickém jazyce

Evaluation of local radiation damage in silicon sensor via charge collection mapping with the Timepix read-out chip

Popis výsledku anglicky

Studies of radiation hardness of silicon sensors are standardly performed with single-pad detectors evaluating their global electrical properties. In this work we introduce a technique to visualize and determine the spatial distribution of radiation damage across the area of a semiconductor sensor. The sensor properties such as charge collection efficiency and charge diffusion were evaluated locally at many points of the sensor creating 2D maps. For this purpose we used a silicon sensor bump bonded to the pixelated Timepix read-out chip. This device, operated in Time-over-threshold (TOT) mode, allows for the direct energy measurement in each pixel. Selected regions of the sensor were intentionally damaged by defined doses (up to 10(12) particles/cm(2))of energetic protons (of 2.5 and 4 MeV). The extent of the damage was measured in terms of the detector response to the same ions. This procedure was performed either on-line during irradiation or off-line after it. The response of the d

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BG - Jaderná, atomová a molekulová fyzika, urychlovače

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Instrumentation

ISSN

1748-0221

e-ISSN

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Svazek periodika

8

Číslo periodika v rámci svazku

April 2013

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

7

Strana od-do

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Kód UT WoS článku

000317462400001

EID výsledku v databázi Scopus

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