A single layer 3D tracking semiconductor detector

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21670%2F19%3A00342165" target="_blank" >RIV/68407700:21670/19:00342165 - isvavai.cz</a>

Výsledek na webu

<a href="https://worldwide.espacenet.com/patent/search/family/044905976/publication/EP2758806A1?q=pn%3DEP2758806A1%3F" target="_blank" >https://worldwide.espacenet.com/patent/search/family/044905976/publication/EP2758806A1?q=pn%3DEP2758806A1%3F</a>

DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

A single layer 3D tracking semiconductor detector

Popis výsledku v původním jazyce

The present invention relates to a pixel detector (10), comprising a semiconductor sensor layer (12), in which charges can be generated upon interaction with particles to be detected. The semiconductor layer defines an X-Y-plane and has a thickness extending in Z-direction. The detector further comprises a read-out electronics layer (14) connected to said semiconductor layer (12), said read-out electronics layer (14) comprising an array of read-out circuits (20) for detecting signals indicative of charges generated in a corresponding volume of said semiconductor sensor layer (12). The neighbouring read-out circuits (20) are connected by a relative timing circuit configured to determine time difference information between signals detected at said neighbouring read-out circuits (20). The time difference information is indicative of a difference in the Z-components of the locations of charge generations in the corresponding neighbouring sensor volumes caused by a particle trajectory that is inclined with respect to the X-Y-plane. ### The patent is exploited by its owner.

Název v anglickém jazyce

A single layer 3D tracking semiconductor detector

Popis výsledku anglicky

The present invention relates to a pixel detector (10), comprising a semiconductor sensor layer (12), in which charges can be generated upon interaction with particles to be detected. The semiconductor layer defines an X-Y-plane and has a thickness extending in Z-direction. The detector further comprises a read-out electronics layer (14) connected to said semiconductor layer (12), said read-out electronics layer (14) comprising an array of read-out circuits (20) for detecting signals indicative of charges generated in a corresponding volume of said semiconductor sensor layer (12). The neighbouring read-out circuits (20) are connected by a relative timing circuit configured to determine time difference information between signals detected at said neighbouring read-out circuits (20). The time difference information is indicative of a difference in the Z-components of the locations of charge generations in the corresponding neighbouring sensor volumes caused by a particle trajectory that is inclined with respect to the X-Y-plane. ### The patent is exploited by its owner.

Druh

P - Patent

CEP obor

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OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

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Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Číslo patentu nebo vzoru

EP2758806

Vydavatel

EPO_1 -

Název vydavatele

European Patent Office

Místo vydání

Munich, The Hague, Berlin, Vienna, Brussels

Stát vydání

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Datum přijetí

12. 6. 2019

Název vlastníka

CERN - European Organisation for Nuclear Research; Friedrich-Alexander-Universitat Erlangen-Nurnberg; Czech technical University in Prague

Způsob využití

A - Výsledek využívá pouze poskytovatel

Druh možnosti využití

P - Využití výsledku jiným subjektem je v některých případech možné bez nabytí licence