Study of the neutron radiation hardness of MAPD-3NK2 silicon photomultipliers

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21670%2F25%3A00387841" target="_blank" >RIV/68407700:21670/25:00387841 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/49777513:23220/25:43977489

Výsledek na webu

<a href="https://doi.org/10.1038/s41598-025-24759-1" target="_blank" >https://doi.org/10.1038/s41598-025-24759-1</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1038/s41598-025-24759-1" target="_blank" >10.1038/s41598-025-24759-1</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Study of the neutron radiation hardness of MAPD-3NK2 silicon photomultipliers

Popis výsledku v původním jazyce

The radiation hardness of MAPD-3NK2 photodiodes with deep-buried pixel structures was evaluated under neutron irradiation at fluences ranging from 3.6 x 109to 3.6 x 1012neq/cm(2). Irradiation induced dark current increase of up to 2060 times, a breakdown voltage shift of (0.37 ± 0.08) V, a photo signal amplitude reduction of (90.1 ± 0.4) %, and a tenfold degradation in amplitude resolution. Partial recovery was observed after 40 days of room-temperature annealing, with dark current decreasing by 35%.Similar performance changes were observed in photodiodes with artificially elevated dark current, indicating that excess current is the primary driver of degradation. This current likely impedes photoelectron detection by occupying pixels or failing to fully quench the avalanche process, thereby reducing photocurrent.

Název v anglickém jazyce

Study of the neutron radiation hardness of MAPD-3NK2 silicon photomultipliers

Popis výsledku anglicky

The radiation hardness of MAPD-3NK2 photodiodes with deep-buried pixel structures was evaluated under neutron irradiation at fluences ranging from 3.6 x 109to 3.6 x 1012neq/cm(2). Irradiation induced dark current increase of up to 2060 times, a breakdown voltage shift of (0.37 ± 0.08) V, a photo signal amplitude reduction of (90.1 ± 0.4) %, and a tenfold degradation in amplitude resolution. Partial recovery was observed after 40 days of room-temperature annealing, with dark current decreasing by 35%.Similar performance changes were observed in photodiodes with artificially elevated dark current, indicating that excess current is the primary driver of degradation. This current likely impedes photoelectron detection by occupying pixels or failing to fully quench the avalanche process, thereby reducing photocurrent.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10304 - Nuclear physics

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Scientific Reports

ISSN

2045-2322

e-ISSN

2045-2322

Svazek periodika

15

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

12

Strana od-do

1-12

Kód UT WoS článku

001620594700032

EID výsledku v databázi Scopus

2-s2.0-105022521990