Electronic Structure Mapping of Branching States in Poly[methyl(phenyl)silane] Upon Exposure to UV Radiation

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F70883521%3A28140%2F16%3A43875524" target="_blank" >RIV/70883521:28140/16:43875524 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.3938/jkps.68.563" target="_blank" >http://dx.doi.org/10.3938/jkps.68.563</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.3938/jkps.68.563" target="_blank" >10.3938/jkps.68.563</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Electronic Structure Mapping of Branching States in Poly[methyl(phenyl)silane] Upon Exposure to UV Radiation

Popis výsledku v původním jazyce

The origin of white photoluminescence in polysilanes has long been disputed, and this emission is closely connected with information recording in nanotechnologies. We elucidated UV degradation of an archetypal model polymer poly[methyl(phenyl)silane] by using a new method for electronic structure mapping of organic semiconductors, energy-resolved electrochemical impedance spectroscopy (ER-EIS) and photoluminescence spectroscopy. UV exposure at 345 nm resulted in two defect bands above the highest occupied molecular orbital (HOMO) in the energy region from MINUS SIGN 5.5 eV to MINUS SIGN 3.5 eV with respect to the zero vacuum energy level. The respective density of states was 1016 -1017 cm-3eV-1, and the total integrated concentration was 0 -1017 cm-3. The photoluminescence in the long-wavelength region gave wide bands with photon energies from 2.2 eV to 3.2 eV (corresponding to wavelengths from 600 nm to 390 nm). The observed bands were interpreted by assuming the formation of energetically distributed Si branching radiative states, whose distribution in the HOMO- lowest unoccupied molecular orbital (LUMO) gap was observed by using ER-EIS. The quantum efficiency of defect state formation increased from Φ(x)345 nm = 0.0045 to Φ(x)290 nm = 0.053. The obtained results may contribute to the production of effective polysilane nanomasks and to information recording.

Název v anglickém jazyce

Electronic Structure Mapping of Branching States in Poly[methyl(phenyl)silane] Upon Exposure to UV Radiation

Popis výsledku anglicky

The origin of white photoluminescence in polysilanes has long been disputed, and this emission is closely connected with information recording in nanotechnologies. We elucidated UV degradation of an archetypal model polymer poly[methyl(phenyl)silane] by using a new method for electronic structure mapping of organic semiconductors, energy-resolved electrochemical impedance spectroscopy (ER-EIS) and photoluminescence spectroscopy. UV exposure at 345 nm resulted in two defect bands above the highest occupied molecular orbital (HOMO) in the energy region from MINUS SIGN 5.5 eV to MINUS SIGN 3.5 eV with respect to the zero vacuum energy level. The respective density of states was 1016 -1017 cm-3eV-1, and the total integrated concentration was 0 -1017 cm-3. The photoluminescence in the long-wavelength region gave wide bands with photon energies from 2.2 eV to 3.2 eV (corresponding to wavelengths from 600 nm to 390 nm). The observed bands were interpreted by assuming the formation of energetically distributed Si branching radiative states, whose distribution in the HOMO- lowest unoccupied molecular orbital (LUMO) gap was observed by using ER-EIS. The quantum efficiency of defect state formation increased from Φ(x)345 nm = 0.0045 to Φ(x)290 nm = 0.053. The obtained results may contribute to the production of effective polysilane nanomasks and to information recording.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

—

Návaznosti

V - Vyzkumna aktivita podporovana z jinych verejnych zdroju

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

JOURNAL OF THE KOREAN PHYSICAL SOCIETY

ISSN

0374-4884

e-ISSN

—

Svazek periodika

68

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

KR - Korejská republika

Počet stran výsledku

6

Strana od-do

563-568

Kód UT WoS článku

000371528200010

EID výsledku v databázi Scopus

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