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Thickness dependence of electronic structure and optical properties of F8BT thin films

Identifikátory výsledku

  • Kód výsledku v IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F70883521%3A28610%2F22%3A63550958" target="_blank" >RIV/70883521:28610/22:63550958 - isvavai.cz</a>

  • Výsledek na webu

    <a href="https://www.mdpi.com/2073-4360/14/3/641/htm" target="_blank" >https://www.mdpi.com/2073-4360/14/3/641/htm</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.3390/polym14030641" target="_blank" >10.3390/polym14030641</a>

Alternativní jazyky

  • Jazyk výsledku

    angličtina

  • Název v původním jazyce

    Thickness dependence of electronic structure and optical properties of F8BT thin films

  • Popis výsledku v původním jazyce

    Electronic devices based on polymer thin films have experienced a tremendous increase in their efficiency in the last two decades. One of the critical factors that affects the efficiency of polymer solar cells or light emitting devices is the presence of structural defects that controls non-radiative recombination. The purpose of this report is to demonstrate a non-trivial thickness dependence of optoelectronic properties and structure (dis)order in thin conductive poly(9,9-dioctyfluorene-alt-benzothiadiazole), F8BT, polymer films. The UV-Vis absorption spectra exhibited blue shift and peak broadening; significant changes in 0–0 and 0–1 radiative transition intensity was found in photoluminescence emission spectra. The density of state (DOS) was directly mapped by energy resolved-electrochemical impedance spectroscopy (ER-EIS). Satellite states 0.5 eV below the lowest unoccupied molecular orbital (LUMO) band were revealed for the thinner polymer films. Moreover, the decreasing of the deep states density in the band gap manifested an increment in the material structural ordering with increasing thickness. Changes in the ratio between crystalline phases with face-on and edge-on orientation of F8BT chains were identified in the films by grazing-incidence wide angle X-ray scattering technique. A thickness threshold in all investigated aspects of the films at a thickness of about 100 nm was observed that can be attributed to the development of J-H aggregation in the film structure and mutual interplay between these two modes. Although a specific structure–property relationship thickness threshold value may be expected for thin films prepared from various polymers, solvents and under different process conditions, the value of about 100 nm can be generally considered as the characteristic length scale of this phenomenon.

  • Název v anglickém jazyce

    Thickness dependence of electronic structure and optical properties of F8BT thin films

  • Popis výsledku anglicky

    Electronic devices based on polymer thin films have experienced a tremendous increase in their efficiency in the last two decades. One of the critical factors that affects the efficiency of polymer solar cells or light emitting devices is the presence of structural defects that controls non-radiative recombination. The purpose of this report is to demonstrate a non-trivial thickness dependence of optoelectronic properties and structure (dis)order in thin conductive poly(9,9-dioctyfluorene-alt-benzothiadiazole), F8BT, polymer films. The UV-Vis absorption spectra exhibited blue shift and peak broadening; significant changes in 0–0 and 0–1 radiative transition intensity was found in photoluminescence emission spectra. The density of state (DOS) was directly mapped by energy resolved-electrochemical impedance spectroscopy (ER-EIS). Satellite states 0.5 eV below the lowest unoccupied molecular orbital (LUMO) band were revealed for the thinner polymer films. Moreover, the decreasing of the deep states density in the band gap manifested an increment in the material structural ordering with increasing thickness. Changes in the ratio between crystalline phases with face-on and edge-on orientation of F8BT chains were identified in the films by grazing-incidence wide angle X-ray scattering technique. A thickness threshold in all investigated aspects of the films at a thickness of about 100 nm was observed that can be attributed to the development of J-H aggregation in the film structure and mutual interplay between these two modes. Although a specific structure–property relationship thickness threshold value may be expected for thin films prepared from various polymers, solvents and under different process conditions, the value of about 100 nm can be generally considered as the characteristic length scale of this phenomenon.

Klasifikace

  • Druh

    J<sub>imp</sub> - Článek v periodiku v databázi Web of Science

  • CEP obor

  • OECD FORD obor

    10404 - Polymer science

Návaznosti výsledku

  • Projekt

  • Návaznosti

    S - Specificky vyzkum na vysokych skolach

Ostatní

  • Rok uplatnění

    2022

  • Kód důvěrnosti údajů

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Údaje specifické pro druh výsledku

  • Název periodika

    Polymers

  • ISSN

    2073-4360

  • e-ISSN

  • Svazek periodika

    14

  • Číslo periodika v rámci svazku

    3

  • Stát vydavatele periodika

    CH - Švýcarská konfederace

  • Počet stran výsledku

    13

  • Strana od-do

    nestrankovano

  • Kód UT WoS článku

    000754903200001

  • EID výsledku v databázi Scopus

    2-s2.0-85124517590