Electronic structure of UV degradation defects in polysilanes studied by Energy Resolved - Electrochemical Impedance Spectroscopy

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F70883521%3A28140%2F16%3A43875525" target="_blank" >RIV/70883521:28140/16:43875525 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.polymdegradstab.2016.02.016" target="_blank" >http://dx.doi.org/10.1016/j.polymdegradstab.2016.02.016</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.polymdegradstab.2016.02.016" target="_blank" >10.1016/j.polymdegradstab.2016.02.016</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Electronic structure of UV degradation defects in polysilanes studied by Energy Resolved - Electrochemical Impedance Spectroscopy

Popis výsledku v původním jazyce

The white photo luminescence after UV degradation in long wavelength range 400-600 nm was examined on the prototypical polysilane, poly[methyl(phenyl)silane], using both photoluminescence spectroscopy and a new method of Energy Resolved - Electrochemical Impedance Spectroscopy (ER-EIS). Two groups of defect states, situated at approximately 440 nm (Delta E-1 = 2.8 eV with respect to electron transport energy) and 520 nm (Delta E-2 = 2.4 eV with respect to electron transport energy) were found by both spectroscopic methods. The white radiative recombination is ascribed to the recombination from trapping sites following the extreme energy migration. The forming of the crosslinking and bridging defects after photochemical scission of Si-Si via the series of various kinds of intermediates is feasible (-silyl R3Si -380 nm, silylene Si2H4 - 480 nm, silene and silylsilylene -550 nm emissions). On the grounds of the IR absorption spectroscopy results we suppose the presence of the bonding by methylene bridging and carbosilane unit Si-CH2-Si creation after Si-Si Si sigma sp3 bond scission. The ER-EIS method turned out to be extremely suitable for elucidation of the electronic structure and its changes in organic semiconductors due to its great resolving power and wide range both in the energy and the density of electronic states.

Název v anglickém jazyce

Electronic structure of UV degradation defects in polysilanes studied by Energy Resolved - Electrochemical Impedance Spectroscopy

Popis výsledku anglicky

The white photo luminescence after UV degradation in long wavelength range 400-600 nm was examined on the prototypical polysilane, poly[methyl(phenyl)silane], using both photoluminescence spectroscopy and a new method of Energy Resolved - Electrochemical Impedance Spectroscopy (ER-EIS). Two groups of defect states, situated at approximately 440 nm (Delta E-1 = 2.8 eV with respect to electron transport energy) and 520 nm (Delta E-2 = 2.4 eV with respect to electron transport energy) were found by both spectroscopic methods. The white radiative recombination is ascribed to the recombination from trapping sites following the extreme energy migration. The forming of the crosslinking and bridging defects after photochemical scission of Si-Si via the series of various kinds of intermediates is feasible (-silyl R3Si -380 nm, silylene Si2H4 - 480 nm, silene and silylsilylene -550 nm emissions). On the grounds of the IR absorption spectroscopy results we suppose the presence of the bonding by methylene bridging and carbosilane unit Si-CH2-Si creation after Si-Si Si sigma sp3 bond scission. The ER-EIS method turned out to be extremely suitable for elucidation of the electronic structure and its changes in organic semiconductors due to its great resolving power and wide range both in the energy and the density of electronic states.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

—

Návaznosti

V - Vyzkumna aktivita podporovana z jinych verejnych zdroju

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Polymer Degradation and Stability

ISSN

0141-3910

e-ISSN

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Svazek periodika

126

Číslo periodika v rámci svazku

Neuveden

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

4

Strana od-do

204-208

Kód UT WoS článku

000372764000024

EID výsledku v databázi Scopus

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