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Unifying Energetic Disorder from Charge Transport and Band Bending in Organic Semiconductors

Identifikátory výsledku

  • Kód výsledku v IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F70883521%3A28140%2F19%3A63522163" target="_blank" >RIV/70883521:28140/19:63522163 - isvavai.cz</a>

  • Výsledek na webu

    <a href="https://onlinelibrary.wiley.com/doi/epdf/10.1002/adfm.201901109" target="_blank" >https://onlinelibrary.wiley.com/doi/epdf/10.1002/adfm.201901109</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1002/adfm.201901109" target="_blank" >10.1002/adfm.201901109</a>

Alternativní jazyky

  • Jazyk výsledku

    angličtina

  • Název v původním jazyce

    Unifying Energetic Disorder from Charge Transport and Band Bending in Organic Semiconductors

  • Popis výsledku v původním jazyce

    Characterizing the density of states (DOS) width accurately is critical in understanding the charge-transport properties of organic semiconducting materials as broader DOS distributions lead to an inferior transport. From a morphological standpoint, the relative densities of ordered and disordered regions are known to affect charge-transport properties in films; however, a comparison between molecular structures showing quantifiable ordered and disordered regions at an atomic level and its impact on DOS widths and charge-transport properties has yet to be made. In this work, for the first time, the DOS distribution widths of two model conjugated polymer systems are characterized using three different techniques. A quantitative correlation between energetic disorder from band-bending measurements and charge transport is established, providing direct experimental evidence that chargecarrier mobility in disordered materials is compromised due to the relaxation of carriers into the tail states of the DOS. Distinction and quantification of ordered and disordered regions of thin films at an atomic level is achieved using solid-state NMR spectroscopy. An ability to compare solid-state film morphologies of organic semiconducting polymers to energetic disorder, and in turn charge transport, can provide useful guidelines for applications of organic conjugated polymers in pertinent devices.

  • Název v anglickém jazyce

    Unifying Energetic Disorder from Charge Transport and Band Bending in Organic Semiconductors

  • Popis výsledku anglicky

    Characterizing the density of states (DOS) width accurately is critical in understanding the charge-transport properties of organic semiconducting materials as broader DOS distributions lead to an inferior transport. From a morphological standpoint, the relative densities of ordered and disordered regions are known to affect charge-transport properties in films; however, a comparison between molecular structures showing quantifiable ordered and disordered regions at an atomic level and its impact on DOS widths and charge-transport properties has yet to be made. In this work, for the first time, the DOS distribution widths of two model conjugated polymer systems are characterized using three different techniques. A quantitative correlation between energetic disorder from band-bending measurements and charge transport is established, providing direct experimental evidence that chargecarrier mobility in disordered materials is compromised due to the relaxation of carriers into the tail states of the DOS. Distinction and quantification of ordered and disordered regions of thin films at an atomic level is achieved using solid-state NMR spectroscopy. An ability to compare solid-state film morphologies of organic semiconducting polymers to energetic disorder, and in turn charge transport, can provide useful guidelines for applications of organic conjugated polymers in pertinent devices.

Klasifikace

  • Druh

    J<sub>imp</sub> - Článek v periodiku v databázi Web of Science

  • CEP obor

  • OECD FORD obor

    20201 - Electrical and electronic engineering

Návaznosti výsledku

  • Projekt

  • Návaznosti

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Ostatní

  • Rok uplatnění

    2019

  • Kód důvěrnosti údajů

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Údaje specifické pro druh výsledku

  • Název periodika

    ADVANCED FUNCTIONAL MATERIALS

  • ISSN

    1616-301X

  • e-ISSN

  • Svazek periodika

    29

  • Číslo periodika v rámci svazku

    20

  • Stát vydavatele periodika

    DE - Spolková republika Německo

  • Počet stran výsledku

    11

  • Strana od-do

    1-11

  • Kód UT WoS článku

    000471335500023

  • EID výsledku v databázi Scopus

    2-s2.0-85063411891