The effect of temperature gradient on the variation of surface topography and reflectivity of anisotropically etched silicon wafers

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F70883521%3A28610%2F17%3A63516123" target="_blank" >RIV/70883521:28610/17:63516123 - isvavai.cz</a>

Výsledek na webu

<a href="http://www.sciencedirect.com/science/article/pii/S092442471630646X" target="_blank" >http://www.sciencedirect.com/science/article/pii/S092442471630646X</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.sna.2017.05.019" target="_blank" >10.1016/j.sna.2017.05.019</a>

Jazyk výsledku

angličtina

Název v původním jazyce

The effect of temperature gradient on the variation of surface topography and reflectivity of anisotropically etched silicon wafers

Popis výsledku v původním jazyce

A novel approach to wet etching of silicon wafers (100) is described in this study. Homogenous organized surface structures were prepared by the utilization of self-organized flow in the etching solution (Bénard-Marangoni thermocapillar instability). The driving force behind this process is a temperature gradient generated by the etching apparatus exclusively constructed for this research. The influences of temperature gradients (1–20 K) and etching time (20–55 min) were studied, with the potassium hydroxide/isopropyl alcohol etching solution. Obtained results indicate that self-organized flow can be utilized for specific and rapid etching, which allows significant variation of the topography and reflectivity of the silicon wafer surface textured in this way.

Název v anglickém jazyce

The effect of temperature gradient on the variation of surface topography and reflectivity of anisotropically etched silicon wafers

Popis výsledku anglicky

A novel approach to wet etching of silicon wafers (100) is described in this study. Homogenous organized surface structures were prepared by the utilization of self-organized flow in the etching solution (Bénard-Marangoni thermocapillar instability). The driving force behind this process is a temperature gradient generated by the etching apparatus exclusively constructed for this research. The influences of temperature gradients (1–20 K) and etching time (20–55 min) were studied, with the potassium hydroxide/isopropyl alcohol etching solution. Obtained results indicate that self-organized flow can be utilized for specific and rapid etching, which allows significant variation of the topography and reflectivity of the silicon wafer surface textured in this way.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

<a href="/cs/project/LO1504" target="_blank" >LO1504: Centrum polymerních systémů plus</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Sensors and Actuators, A: Physical

ISSN

0924-4247

e-ISSN

—

Svazek periodika

262

Číslo periodika v rámci svazku

Neuveden

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

9

Strana od-do

1-9

Kód UT WoS článku

000404491900001

EID výsledku v databázi Scopus

2-s2.0-85019872451