Nanopatterning of silicon nitride membranes

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F70883521%3A28610%2F17%3A63516615" target="_blank" >RIV/70883521:28610/17:63516615 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68081731:_____/17:00464387

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Nanopatterning of silicon nitride membranes

Popis výsledku v původním jazyce

Membranes are typically created by a thin silicon nitride (SIN) layer deposited on a silicon wafer. Both, top and bottom side of the wafer is covered by a thin layer of the silicon nitride. The principle of silicon nitride membranes preparation is based on the wet anisotropic etching of the bottom side of the silicon wafer with crystallographic orientation (100). While the basic procedure for the preparation of such membranes is well known, the nano patterning of thin membranes presents quite important challenges. This is partially due to the mechanical stress which is typically presented within such membranes. The resolution requirements of the membrane patterning have gradually increased. Advanced lithographic techniques and etching procedures had to be developed. This paper summarizes theoretical aspects, technological issues and achieved results. The application potential of silicon nitride membranes as a base for multifunctional micro system (MMS) is also discussed.

Název v anglickém jazyce

Nanopatterning of silicon nitride membranes

Popis výsledku anglicky

Membranes are typically created by a thin silicon nitride (SIN) layer deposited on a silicon wafer. Both, top and bottom side of the wafer is covered by a thin layer of the silicon nitride. The principle of silicon nitride membranes preparation is based on the wet anisotropic etching of the bottom side of the silicon wafer with crystallographic orientation (100). While the basic procedure for the preparation of such membranes is well known, the nano patterning of thin membranes presents quite important challenges. This is partially due to the mechanical stress which is typically presented within such membranes. The resolution requirements of the membrane patterning have gradually increased. Advanced lithographic techniques and etching procedures had to be developed. This paper summarizes theoretical aspects, technological issues and achieved results. The application potential of silicon nitride membranes as a base for multifunctional micro system (MMS) is also discussed.

Druh

D - Stať ve sborníku

CEP obor

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OECD FORD obor

21002 - Nano-processes (applications on nano-scale); (biomaterials to be 2.9)

Projekt

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Návaznosti

V - Vyzkumna aktivita podporovana z jinych verejnych zdroju

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Nanocon 2016

ISBN

978-80-87294-71-0

ISSN

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e-ISSN

neuvedeno

Počet stran výsledku

6

Strana od-do

709-714

Název nakladatele

Tanger spol. s r. o.

Místo vydání

Ostrava

Místo konání akce

Brno

Datum konání akce

19. 10. 2016

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000410656100123