Study of the development of defects in Si PIN diodes exposed to 23 GeV/c protons

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11110%2F15%3A10296032" target="_blank" >RIV/00216208:11110/15:10296032 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21670/15:00237043 RIV/68407700:21220/15:00237043

Výsledek na webu

<a href="http://dx.doi.org/10.1088/1748-0221/10/03/P03021" target="_blank" >http://dx.doi.org/10.1088/1748-0221/10/03/P03021</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1748-0221/10/03/P03021" target="_blank" >10.1088/1748-0221/10/03/P03021</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Study of the development of defects in Si PIN diodes exposed to 23 GeV/c protons

Popis výsledku v původním jazyce

Studying the development of crystallographic defects in PIN diodes is the focus of the RD-50 (CERN) research project. The study was carried out on Si PIN diodes manufactured and used in the Czech Republic. The Si PIN diodes were irradiated with 23 GeV/cprotons at doses ranging from 0.5 to 43 Gy. The Si PIN diodes were calibrated in a 23 GeV/c proton source [1], and the energy traps of the defects produced were measured by the DLTS method. The IV characteristics and the parameters of the defects were studied. The 23 GeV/c protons produce typical crystallographic defects and, at higher doses, bring about their regrouping thus giving rise to a new generation of defects. Defects are classified by their energy levels in the forbidden band from the conduction band. The mechanism influencing the parameters of the defects is discussed. The study of defects in silicon is important for silicon-based electronic elements used in cosmic research because of their effects on the operability and reli

Název v anglickém jazyce

Study of the development of defects in Si PIN diodes exposed to 23 GeV/c protons

Popis výsledku anglicky

Studying the development of crystallographic defects in PIN diodes is the focus of the RD-50 (CERN) research project. The study was carried out on Si PIN diodes manufactured and used in the Czech Republic. The Si PIN diodes were irradiated with 23 GeV/cprotons at doses ranging from 0.5 to 43 Gy. The Si PIN diodes were calibrated in a 23 GeV/c proton source [1], and the energy traps of the defects produced were measured by the DLTS method. The IV characteristics and the parameters of the defects were studied. The 23 GeV/c protons produce typical crystallographic defects and, at higher doses, bring about their regrouping thus giving rise to a new generation of defects. Defects are classified by their energy levels in the forbidden band from the conduction band. The mechanism influencing the parameters of the defects is discussed. The study of defects in silicon is important for silicon-based electronic elements used in cosmic research because of their effects on the operability and reli

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BG - Jaderná, atomová a molekulová fyzika, urychlovače

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

V - Vyzkumna aktivita podporovana z jinych verejnych zdroju

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Instrumentation

ISSN

1748-0221

e-ISSN

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Svazek periodika

10

Číslo periodika v rámci svazku

March

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

5

Strana od-do

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Kód UT WoS článku

000357944500071

EID výsledku v databázi Scopus

2-s2.0-84950321419