Local Lifetime Control in 4H-SiC by Proton Irradiation

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F18%3A00321798" target="_blank" >RIV/68407700:21230/18:00321798 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.scientific.net/MSF.924.436" target="_blank" >https://www.scientific.net/MSF.924.436</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.4028/www.scientific.net/MSF.924.436" target="_blank" >10.4028/www.scientific.net/MSF.924.436</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Local Lifetime Control in 4H-SiC by Proton Irradiation

Popis výsledku v původním jazyce

The effect of local lifetime control by proton irradiation on the OCVD response of a 10 kV SiC PiN diode was investigated. Carrier lifetime was reduced locally by irradiation with 800 keV protons at fluences up to 1x1011 cm-2. Radiation defects were characterized by DLTS and C-V profiling; excess carrier dynamics were measured by the OCVD and analyzed using the calibrated device simulator ATLAS from Silvaco, Inc. Results show that proton implantation followed by low temperature annealing can be used for controllable local lifetime reduction in SiC devices. The dominant recombination centre is the Z1/2 defect, whose distribution can be set by irradiation energy and fluence. The local lifetime reduction, which improves diode recovery, can be monitored by OCVD response and simulated using the SRH model accounting for the Z1/2 defect.

Název v anglickém jazyce

Local Lifetime Control in 4H-SiC by Proton Irradiation

Popis výsledku anglicky

The effect of local lifetime control by proton irradiation on the OCVD response of a 10 kV SiC PiN diode was investigated. Carrier lifetime was reduced locally by irradiation with 800 keV protons at fluences up to 1x1011 cm-2. Radiation defects were characterized by DLTS and C-V profiling; excess carrier dynamics were measured by the OCVD and analyzed using the calibrated device simulator ATLAS from Silvaco, Inc. Results show that proton implantation followed by low temperature annealing can be used for controllable local lifetime reduction in SiC devices. The dominant recombination centre is the Z1/2 defect, whose distribution can be set by irradiation energy and fluence. The local lifetime reduction, which improves diode recovery, can be monitored by OCVD response and simulated using the SRH model accounting for the Z1/2 defect.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Silicon Carbide and Related Materials 2017

ISBN

978-3-0357-1145-5

ISSN

1662-9752

e-ISSN

—

Počet stran výsledku

4

Strana od-do

436-439

Název nakladatele

Trans Tech Publications

Místo vydání

Uetikon-Zurich

Místo konání akce

Washington

Datum konání akce

17. 9. 2017

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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