Optimization of SiC Power p-i-n Diode Parameters by Proton Irradiation

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F18%3A00322920" target="_blank" >RIV/68407700:21230/18:00322920 - isvavai.cz</a>

Výsledek na webu

<a href="https://ieeexplore.ieee.org/document/8452157/" target="_blank" >https://ieeexplore.ieee.org/document/8452157/</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/TED.2018.2866763" target="_blank" >10.1109/TED.2018.2866763</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Optimization of SiC Power p-i-n Diode Parameters by Proton Irradiation

Popis výsledku v původním jazyce

Local lifetime reduction by proton irradiation was used to optimize static and dynamic parameters of a 10 kV SiC p-i-n diode. Carrier lifetime was reduced locally at the anode side by irradiation with 800 keV protons at fluences up to 1e11 cm-2. Results show that proton irradiation followed by annealing at 370ºC can be used for local and controllable reduction of carrier lifetime in SiC devices. The dominant recombination center is the Z1/2 defect, whose distribution can be set by irradiation energy and fluence. Proton irradiation substantially improves diode turn OFF while its effect on the forward voltage drop and leakage is not so harmful. Comparison of the technology curve for the unirradiated and proton irradiated p-i-n diode then clearly show that proton irradiation provides a superior trade-off between the static and dynamic losses.

Název v anglickém jazyce

Optimization of SiC Power p-i-n Diode Parameters by Proton Irradiation

Popis výsledku anglicky

Local lifetime reduction by proton irradiation was used to optimize static and dynamic parameters of a 10 kV SiC p-i-n diode. Carrier lifetime was reduced locally at the anode side by irradiation with 800 keV protons at fluences up to 1e11 cm-2. Results show that proton irradiation followed by annealing at 370ºC can be used for local and controllable reduction of carrier lifetime in SiC devices. The dominant recombination center is the Z1/2 defect, whose distribution can be set by irradiation energy and fluence. Proton irradiation substantially improves diode turn OFF while its effect on the forward voltage drop and leakage is not so harmful. Comparison of the technology curve for the unirradiated and proton irradiated p-i-n diode then clearly show that proton irradiation provides a superior trade-off between the static and dynamic losses.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

IEEE Transactions on Electron Devices

ISSN

0018-9383

e-ISSN

1557-9646

Svazek periodika

65

Číslo periodika v rámci svazku

10

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

7

Strana od-do

4483-4489

Kód UT WoS článku

000445239700062

EID výsledku v databázi Scopus

2-s2.0-85052809067