Radiation Resistance of High-Voltage Silicon and 4H-SiC Power p-i-n Diodes

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F21%3A00344526" target="_blank" >RIV/68407700:21230/21:00344526 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1109/TED.2020.3038713" target="_blank" >https://doi.org/10.1109/TED.2020.3038713</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/TED.2020.3038713" target="_blank" >10.1109/TED.2020.3038713</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Radiation Resistance of High-Voltage Silicon and 4H-SiC Power p-i-n Diodes

Popis výsledku v původním jazyce

The different effect of displacement damage produced by neutron irradiation on the static characteristics of 4.5-kV silicon and 4H silicon carbide (SiC) p-i-n power diodes is explained using deep level transient spectroscopy (DLTS), C–V profiling, and open-circuit voltage decay (OCVD) measurements. The number of introduced defects in SiC is higher, also the degradation of carrier lifetime and carrier removal proceeds more swiftly in SiC than those in silicon. However, smaller dimensions and a higher doping level of the n-base of the SiC diode compensate for these negative effects. As a result, the SiC p-i-n diode exhibits substantially higher resistance to neutron irradiation at higher fluences when the diode loses its ON-state carrier modulation capability. SiC also shows a negligible effect of irradiation on leakage current due to the wider bandgap. One may assume a better reliability of SiC bipolar devices over the silicon in a high neutron radiation environment.

Název v anglickém jazyce

Radiation Resistance of High-Voltage Silicon and 4H-SiC Power p-i-n Diodes

Popis výsledku anglicky

The different effect of displacement damage produced by neutron irradiation on the static characteristics of 4.5-kV silicon and 4H silicon carbide (SiC) p-i-n power diodes is explained using deep level transient spectroscopy (DLTS), C–V profiling, and open-circuit voltage decay (OCVD) measurements. The number of introduced defects in SiC is higher, also the degradation of carrier lifetime and carrier removal proceeds more swiftly in SiC than those in silicon. However, smaller dimensions and a higher doping level of the n-base of the SiC diode compensate for these negative effects. As a result, the SiC p-i-n diode exhibits substantially higher resistance to neutron irradiation at higher fluences when the diode loses its ON-state carrier modulation capability. SiC also shows a negligible effect of irradiation on leakage current due to the wider bandgap. One may assume a better reliability of SiC bipolar devices over the silicon in a high neutron radiation environment.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

IEEE Transactions on Electron Devices

ISSN

0018-9383

e-ISSN

1557-9646

Svazek periodika

68

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

6

Strana od-do

202-207

Kód UT WoS článku

000602689000016

EID výsledku v databázi Scopus

2-s2.0-85097956319