Radiation Defects and Carrier Lifetime in 4H-SiC Bipolar Devices

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F21%3A00350570" target="_blank" >RIV/68407700:21230/21:00350570 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1002/pssa.202100218" target="_blank" >https://doi.org/10.1002/pssa.202100218</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/pssa.202100218" target="_blank" >10.1002/pssa.202100218</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Radiation Defects and Carrier Lifetime in 4H-SiC Bipolar Devices

Popis výsledku v původním jazyce

The effect of radiation damage on the minority carrier lifetime in the 4 H-SiC epilayers forming the n-base of the power p-i-n diodes is presented. Irradiation with fast neutrons and MeV protons is used for uniform and local lifetime reduction. Deep-level transient spectroscopy in combination with open-circuit voltage decay measurement shows that the carrier lifetime is reduced by increased carrier recombination on Z(1)/Z(2), EH3, and possibly RD4 levels. The lifetime degrades swiftly and the ON-state carrier modulation capability of high-voltage devices can be easily lost already at very low fluences. The results further show that the proton irradiation provides an excellent tool for local lifetime tailoring. The carrier lifetime can be easily set by proton fluence and localized by proton energy. The proper local lifetime reduction speeds up diode recovery without an undesirable increase in the forward voltage drop. However, attention must be taken to properly locate the damage maximum so as not to increase device leakage.

Název v anglickém jazyce

Radiation Defects and Carrier Lifetime in 4H-SiC Bipolar Devices

Popis výsledku anglicky

The effect of radiation damage on the minority carrier lifetime in the 4 H-SiC epilayers forming the n-base of the power p-i-n diodes is presented. Irradiation with fast neutrons and MeV protons is used for uniform and local lifetime reduction. Deep-level transient spectroscopy in combination with open-circuit voltage decay measurement shows that the carrier lifetime is reduced by increased carrier recombination on Z(1)/Z(2), EH3, and possibly RD4 levels. The lifetime degrades swiftly and the ON-state carrier modulation capability of high-voltage devices can be easily lost already at very low fluences. The results further show that the proton irradiation provides an excellent tool for local lifetime tailoring. The carrier lifetime can be easily set by proton fluence and localized by proton energy. The proper local lifetime reduction speeds up diode recovery without an undesirable increase in the forward voltage drop. However, attention must be taken to properly locate the damage maximum so as not to increase device leakage.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

ISSN

1862-6300

e-ISSN

1862-6319

Svazek periodika

218

Číslo periodika v rámci svazku

23

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

7

Strana od-do

1-7

Kód UT WoS článku

000665848600001

EID výsledku v databázi Scopus

2-s2.0-85108782985