Displacement damage and total ionisation dose effects on 4H-SiC power devices

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F19%3A00335095" target="_blank" >RIV/68407700:21230/19:00335095 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1049/iet-pel.2019.0049" target="_blank" >https://doi.org/10.1049/iet-pel.2019.0049</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1049/iet-pel.2019.0049" target="_blank" >10.1049/iet-pel.2019.0049</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Displacement damage and total ionisation dose effects on 4H-SiC power devices

Popis výsledku v původním jazyce

A comprehensive study of displacement damage and total ionisation dose effects on 4H-silicon carbide power devices is presented. Power diodes and transistors produced by different manufacturers were irradiated by high-energy particles (protons, alphas, electrons and neutrons). The influence of radiation on device characteristics was determined, the introduced radiation defects were identified, and the main degradation mechanisms were established. Results show that radiation leads to the creation of acceptor traps in the lightly doped drift regions of irradiated devices. Devices then degrade due to the removal of the carriers and the decrease in carrier mobility and lifetime. For unipolar devices, the gradual increase of the forward voltage is typical while the blocking characteristics remain nearly unchanged. In bipolar devices, high introduction rates of defects cause a sharp reduction of carrier lifetime. This results in shorter carrier diffusion lengths and subsequent loss of conductivity modulation leading to a sharp increase of the forward voltage drop. The irradiation also shifts the threshold voltage of power switches. That is critical, namely for metal–oxide–semiconductor field-effect transistors. According to the authors’ study, the junction barrier Schottky diode and junction field-effect transistor (JFET) can be considered the most radiation-resistant SiC power devices.

Název v anglickém jazyce

Displacement damage and total ionisation dose effects on 4H-SiC power devices

Popis výsledku anglicky

A comprehensive study of displacement damage and total ionisation dose effects on 4H-silicon carbide power devices is presented. Power diodes and transistors produced by different manufacturers were irradiated by high-energy particles (protons, alphas, electrons and neutrons). The influence of radiation on device characteristics was determined, the introduced radiation defects were identified, and the main degradation mechanisms were established. Results show that radiation leads to the creation of acceptor traps in the lightly doped drift regions of irradiated devices. Devices then degrade due to the removal of the carriers and the decrease in carrier mobility and lifetime. For unipolar devices, the gradual increase of the forward voltage is typical while the blocking characteristics remain nearly unchanged. In bipolar devices, high introduction rates of defects cause a sharp reduction of carrier lifetime. This results in shorter carrier diffusion lengths and subsequent loss of conductivity modulation leading to a sharp increase of the forward voltage drop. The irradiation also shifts the threshold voltage of power switches. That is critical, namely for metal–oxide–semiconductor field-effect transistors. According to the authors’ study, the junction barrier Schottky diode and junction field-effect transistor (JFET) can be considered the most radiation-resistant SiC power devices.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

IET Power Electronics

ISSN

1755-4535

e-ISSN

1755-4543

Svazek periodika

12

Číslo periodika v rámci svazku

15

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

9

Strana od-do

3910-3918

Kód UT WoS článku

000500187900008

EID výsledku v databázi Scopus

2-s2.0-85075818971