Total Irradiation Dose Effects on 4H-SiC Power Devices

Kód výsledku v IS VaVaI

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Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Total Irradiation Dose Effects on 4H-SiC Power Devices

Popis výsledku v původním jazyce

The effect of neutron, electron and proton irradiation on electrical characteristics of different SiC power devices (JBS and PiN diodes, JFETs and MOSFETs) was investigated. DLTS investigation showed that above mentioned projectiles introduce similar deep acceptor levels (electron traps) in the SiC bandgap which compensate shallow donors, decrease carrier mobility and lifetime. The key degradation effect occurring in unipolar devices is the increase of the ON-state resistance which is caused by the compensation of the low doped n-type drift region and simultaneous lowering of electron mobility. In bipolar devices, high introduction rates of lifetime killing defects (the Z1/Z2 centers) cause a sharp reduction of carrier lifetime. This results in shorter carrier diffusion lengths and subsequent loss of conductivity modulation in the ON state leading to a sharp increase of the forward voltage drop. In the case of SiC power switches (JFET, MOSFET), these effects are accompanied by the shift of the threshold voltage. This effect is critical for MOSFETs since they contain the charge sensitive oxide layer. According to our study, the JBS diode and JFET can be considered the most radiation resistant devices.

Název v anglickém jazyce

Total Irradiation Dose Effects on 4H-SiC Power Devices

Popis výsledku anglicky

The effect of neutron, electron and proton irradiation on electrical characteristics of different SiC power devices (JBS and PiN diodes, JFETs and MOSFETs) was investigated. DLTS investigation showed that above mentioned projectiles introduce similar deep acceptor levels (electron traps) in the SiC bandgap which compensate shallow donors, decrease carrier mobility and lifetime. The key degradation effect occurring in unipolar devices is the increase of the ON-state resistance which is caused by the compensation of the low doped n-type drift region and simultaneous lowering of electron mobility. In bipolar devices, high introduction rates of lifetime killing defects (the Z1/Z2 centers) cause a sharp reduction of carrier lifetime. This results in shorter carrier diffusion lengths and subsequent loss of conductivity modulation in the ON state leading to a sharp increase of the forward voltage drop. In the case of SiC power switches (JFET, MOSFET), these effects are accompanied by the shift of the threshold voltage. This effect is critical for MOSFETs since they contain the charge sensitive oxide layer. According to our study, the JBS diode and JFET can be considered the most radiation resistant devices.

Druh

D - Stať ve sborníku

CEP obor

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OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

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Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

ISPS'18 Proceedings

ISBN

978-80-01-06469-6

ISSN

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e-ISSN

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Počet stran výsledku

7

Strana od-do

85-91

Název nakladatele

Česká technika - nakladatelství ČVUT

Místo vydání

Praha

Místo konání akce

Praha

Datum konání akce

29. 8. 2018

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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