Lifetime Control in SiC PiN Diodes Using Radiation Defects

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F17%3A00311286" target="_blank" >RIV/68407700:21230/17:00311286 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.4028/www.scientific.net/MSF.897.463" target="_blank" >http://dx.doi.org/10.4028/www.scientific.net/MSF.897.463</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.4028/www.scientific.net/MSF.897.463" target="_blank" >10.4028/www.scientific.net/MSF.897.463</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Lifetime Control in SiC PiN Diodes Using Radiation Defects

Popis výsledku v původním jazyce

Application of radiation defects for lifetime control in contemporary SiC PiN diodes was investigated using the calibrated device simulator ATLAS from Silvaco, Inc. Recombination models accounting for the effect of deep levels introduced by the irradiation were set according to experimental results obtained by C-V and DLTS measurements performed on low-doped n-type SiC epilayers irradiated with 4.5 MeV electrons and 670 keV protons. Global (4.5 MeV electron irradiation) and local (700 keV proton irradiation) lifetime reduction was then applied on the 2A/10kV SiC PiN diode and the ON-state and reverse recovery characteristics were simulated and compared. Results show that the proton irradiation can substantially improve the trade-off between the diode ON-state and turn-OFF losses. Compared to the electron irradiation, the local lifetime killing by protons allows achieving better trade-off and softer recovery curves.

Název v anglickém jazyce

Lifetime Control in SiC PiN Diodes Using Radiation Defects

Popis výsledku anglicky

Application of radiation defects for lifetime control in contemporary SiC PiN diodes was investigated using the calibrated device simulator ATLAS from Silvaco, Inc. Recombination models accounting for the effect of deep levels introduced by the irradiation were set according to experimental results obtained by C-V and DLTS measurements performed on low-doped n-type SiC epilayers irradiated with 4.5 MeV electrons and 670 keV protons. Global (4.5 MeV electron irradiation) and local (700 keV proton irradiation) lifetime reduction was then applied on the 2A/10kV SiC PiN diode and the ON-state and reverse recovery characteristics were simulated and compared. Results show that the proton irradiation can substantially improve the trade-off between the diode ON-state and turn-OFF losses. Compared to the electron irradiation, the local lifetime killing by protons allows achieving better trade-off and softer recovery curves.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Silicon Carbide and Related Materials 2016

ISBN

978-3-0357-1043-4

ISSN

1662-9752

e-ISSN

—

Počet stran výsledku

4

Strana od-do

463-466

Název nakladatele

TRANS TECH PUBLICATIONS LTD

Místo vydání

Zurich

Místo konání akce

Halkidiki

Datum konání akce

25. 9. 2016

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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