Experimental Analysis of Noise in CdTe Radiation Detectors

Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F09%3A00206854" target="_blank" >RIV/00216208:11320/09:00206854 - isvavai.cz</a>
Výsledek na webu
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DOI - Digital Object Identifier
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Jazyk výsledku
angličtina
Název v původním jazyce
Experimental Analysis of Noise in CdTe Radiation Detectors
Popis výsledku v původním jazyce
Noise characteristics of CdTe gamma and X-ray detectors have been carried out. Measurements of high-ohmic detectors with two golden contacts and low-ohmic detectors with four contacts were carried out. Two voltage contacts were used to distinguish between metal-semiconductor junction area with depleted region and homogeneous part of the sample. The noise characteristics of the samples were measured in dark and with the illumination in the range of radiation from ultraviolet to infrared.
Název v anglickém jazyce
Experimental Analysis of Noise in CdTe Radiation Detectors
Popis výsledku anglicky
Noise characteristics of CdTe gamma and X-ray detectors have been carried out. Measurements of high-ohmic detectors with two golden contacts and low-ohmic detectors with four contacts were carried out. Two voltage contacts were used to distinguish between metal-semiconductor junction area with depleted region and homogeneous part of the sample. The noise characteristics of the samples were measured in dark and with the illumination in the range of radiation from ultraviolet to infrared.

Projekt
<a href="/cs/project/GA102%2F09%2F1920" target="_blank" >GA102/09/1920: Stochastické jevy v polovodičových strukturách MIS a MIM</a><br>
Návaznosti
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění
2009
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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