Magneto-optical investigation of two-dimensional gases in n-type resonant tunneling diodes

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F12%3A10106103" target="_blank" >RIV/00216208:11320/12:10106103 - isvavai.cz</a>

Výsledek na webu

<a href="http://iopscience.iop.org/0268-1242/27/1/015018?fromSearchPage=true" target="_blank" >http://iopscience.iop.org/0268-1242/27/1/015018?fromSearchPage=true</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/0268-1242/27/1/015018" target="_blank" >10.1088/0268-1242/27/1/015018</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Magneto-optical investigation of two-dimensional gases in n-type resonant tunneling diodes

Popis výsledku v původním jazyce

We have studied the polarized emission from the contact layers and the quantum well of asymmetric n-type GaAs/GaAlAs resonant tunneling diodes under high magnetic fields (up to 19 T) parallel to the tunnel current. The photoluminescence from the GaAs contact layers shows evidence of the recombination from a two-dimensional hole gas accumulated next to the GaAlAs barrier and free carriers. Both the energy position and the intensity of this emission are voltage dependent. In addition, the photoluminescence from the two-dimensional hole gas and quantum well is strongly spin-polarized under the applied voltage and high magnetic fields. Pronounced oscillatory features are observed in the magnetic field dependence of the polarization degree from the quantumwell and the two-dimensional hole emissions at integer filling factors. The obtained data show that resonant tunneling diodes are interesting systems to study the physical properties of voltage-controlled two-dimensional gases in the accu

Název v anglickém jazyce

Magneto-optical investigation of two-dimensional gases in n-type resonant tunneling diodes

Popis výsledku anglicky

We have studied the polarized emission from the contact layers and the quantum well of asymmetric n-type GaAs/GaAlAs resonant tunneling diodes under high magnetic fields (up to 19 T) parallel to the tunnel current. The photoluminescence from the GaAs contact layers shows evidence of the recombination from a two-dimensional hole gas accumulated next to the GaAlAs barrier and free carriers. Both the energy position and the intensity of this emission are voltage dependent. In addition, the photoluminescence from the two-dimensional hole gas and quantum well is strongly spin-polarized under the applied voltage and high magnetic fields. Pronounced oscillatory features are observed in the magnetic field dependence of the polarization degree from the quantumwell and the two-dimensional hole emissions at integer filling factors. The obtained data show that resonant tunneling diodes are interesting systems to study the physical properties of voltage-controlled two-dimensional gases in the accu

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

—

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Semiconductor Science and Technology

ISSN

0268-1242

e-ISSN

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Svazek periodika

27

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

7

Strana od-do

—

Kód UT WoS článku

000300623400020

EID výsledku v databázi Scopus

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