Symmetrical current-voltage characteristic of a metal-semiconductor-metal structure of Schottky contacts and parameter retrieval of a CdTe structure

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F12%3A10125914" target="_blank" >RIV/00216208:11320/12:10125914 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216305:26220/11:PU95394

Výsledek na webu

<a href="http://dx.doi.org/10.1088/0268-1242/27/1/015006" target="_blank" >http://dx.doi.org/10.1088/0268-1242/27/1/015006</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/0268-1242/27/1/015006" target="_blank" >10.1088/0268-1242/27/1/015006</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Symmetrical current-voltage characteristic of a metal-semiconductor-metal structure of Schottky contacts and parameter retrieval of a CdTe structure

Popis výsledku v původním jazyce

Symmetrical, non-linear and current-voltage (I-V) characteristics of a metal-semiconductor-metal (M-S-M) structure of two metallic Schottky contacts fabricated to a p-type semiconductor were modeled by treating the semiconductor as a resistor sandwichedbetween two identical head-to-head Schottky barriers. The voltage distributions along the M-S-M structure were numerically determined and found that the voltage drop across the reverse-biased Schottky barrier is dominating at the low bias voltage, and the dominant range depends on the value of the resistor of the semiconductor bulk. The field dependence of barrier height due to the image force was proposed to be the mechanism for the current through the M-S-M structure when the voltage drop across the reverse-biased barrier is dominating. The proposed model was applied to the I-V curves measured at different temperatures on low-resistivity p-type CdTe with Au contacts and the density of the effective acceptors calculated, and the zero-f

Název v anglickém jazyce

Symmetrical current-voltage characteristic of a metal-semiconductor-metal structure of Schottky contacts and parameter retrieval of a CdTe structure

Popis výsledku anglicky

Symmetrical, non-linear and current-voltage (I-V) characteristics of a metal-semiconductor-metal (M-S-M) structure of two metallic Schottky contacts fabricated to a p-type semiconductor were modeled by treating the semiconductor as a resistor sandwichedbetween two identical head-to-head Schottky barriers. The voltage distributions along the M-S-M structure were numerically determined and found that the voltage drop across the reverse-biased Schottky barrier is dominating at the low bias voltage, and the dominant range depends on the value of the resistor of the semiconductor bulk. The field dependence of barrier height due to the image force was proposed to be the mechanism for the current through the M-S-M structure when the voltage drop across the reverse-biased barrier is dominating. The proposed model was applied to the I-V curves measured at different temperatures on low-resistivity p-type CdTe with Au contacts and the density of the effective acceptors calculated, and the zero-f

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Semiconductor Science and Technology

ISSN

0268-1242

e-ISSN

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Svazek periodika

27

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

6

Strana od-do

015006-015011

Kód UT WoS článku

000300623400008

EID výsledku v databázi Scopus

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