Photoexcited charge carrier dynamics in silicon nanocrystal/SiO2 superlattices

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F14%3A10286181" target="_blank" >RIV/00216208:11320/14:10286181 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.physe.2013.09.003" target="_blank" >http://dx.doi.org/10.1016/j.physe.2013.09.003</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.physe.2013.09.003" target="_blank" >10.1016/j.physe.2013.09.003</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Photoexcited charge carrier dynamics in silicon nanocrystal/SiO2 superlattices

Popis výsledku v původním jazyce

We report in detail on the dynamics of photoexcited charge carriers in size-controlled silicon nanocrystals in silicon nanocrystal/SiO2 superlattices. The samples were prepared using plasma enhanced chemical vapor deposition and subsequent thermally induced phase separation. This unique approach allows preparation of well-defined Si nanocrystals. Experimental techniques of time-resolved absorption and photoluminescence were used to monitor the carrier dynamics on a wide time scale from picoseconds to milliseconds for a set of samples with different parameters (nanocrystal size, hydrogen annealing). The initial fast decay (tens of picoseconds) dependent on pump intensity for excitation levels exceeding one electron-hole pair per nanocrystal can be interpreted in terms of the bimolecular recombination with constant B = (2-3) x 10(-10) cm(3) s(-1). The slow pump intensity independent decay (microseconds) can be reproduced well by a stretched-exponential function. The dependence of stretch

Název v anglickém jazyce

Photoexcited charge carrier dynamics in silicon nanocrystal/SiO2 superlattices

Popis výsledku anglicky

We report in detail on the dynamics of photoexcited charge carriers in size-controlled silicon nanocrystals in silicon nanocrystal/SiO2 superlattices. The samples were prepared using plasma enhanced chemical vapor deposition and subsequent thermally induced phase separation. This unique approach allows preparation of well-defined Si nanocrystals. Experimental techniques of time-resolved absorption and photoluminescence were used to monitor the carrier dynamics on a wide time scale from picoseconds to milliseconds for a set of samples with different parameters (nanocrystal size, hydrogen annealing). The initial fast decay (tens of picoseconds) dependent on pump intensity for excitation levels exceeding one electron-hole pair per nanocrystal can be interpreted in terms of the bimolecular recombination with constant B = (2-3) x 10(-10) cm(3) s(-1). The slow pump intensity independent decay (microseconds) can be reproduced well by a stretched-exponential function. The dependence of stretch

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BH - Optika, masery a lasery

OECD FORD obor

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Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physica E: Low-Dimensional Systems and Nanostructures

ISSN

1386-9477

e-ISSN

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Svazek periodika

56

Číslo periodika v rámci svazku

September 2013

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

6

Strana od-do

177-182

Kód UT WoS článku

000330815800031

EID výsledku v databázi Scopus

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