Ionized vapor deposition of antimicrobial Ti-Cu films with controlled copper release

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F14%3A10288026" target="_blank" >RIV/00216208:11320/14:10288026 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/14:00427030 RIV/60076658:12310/14:43887087

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.tsf.2013.11.001" target="_blank" >http://dx.doi.org/10.1016/j.tsf.2013.11.001</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.tsf.2013.11.001" target="_blank" >10.1016/j.tsf.2013.11.001</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Ionized vapor deposition of antimicrobial Ti-Cu films with controlled copper release

Popis výsledku v původním jazyce

Formation of Ti-Cu thin films with regard to controlling the copper release is reported in the paper. Copper released from films can inhibit bacterial colonization and can be utilized as an implant surface modification. The copper release has to be controlled (i) to repress the bacteria growth and (ii) to balance the Cu level tolerated by osteoblasts cells. The dual-high power impulse magnetron sputtering superimposed with mid-frequency discharge was employed for ionized vapor deposition of Ti-Cu films.It was found that the microscopical architecture of films is strongly influenced by the pressure during the deposition process. There is an indication that these structural changes are caused by the energy of deposited species (ion distribution functions were measured by time-resolved retarding field analyzer). Grain-like structure with large Cu crystals is formed at higher pressures, i. e. at low ion energies. The grain-like microstructure increases an effective film area which encoura

Název v anglickém jazyce

Ionized vapor deposition of antimicrobial Ti-Cu films with controlled copper release

Popis výsledku anglicky

Formation of Ti-Cu thin films with regard to controlling the copper release is reported in the paper. Copper released from films can inhibit bacterial colonization and can be utilized as an implant surface modification. The copper release has to be controlled (i) to repress the bacteria growth and (ii) to balance the Cu level tolerated by osteoblasts cells. The dual-high power impulse magnetron sputtering superimposed with mid-frequency discharge was employed for ionized vapor deposition of Ti-Cu films.It was found that the microscopical architecture of films is strongly influenced by the pressure during the deposition process. There is an indication that these structural changes are caused by the energy of deposited species (ion distribution functions were measured by time-resolved retarding field analyzer). Grain-like structure with large Cu crystals is formed at higher pressures, i. e. at low ion energies. The grain-like microstructure increases an effective film area which encoura

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BL - Fyzika plasmatu a výboje v plynech

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Thin Solid Films

ISSN

0040-6090

e-ISSN

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Svazek periodika

550

Číslo periodika v rámci svazku

leden

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

6

Strana od-do

389-394

Kód UT WoS článku

000328499700060

EID výsledku v databázi Scopus

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