Charge transport in silicon nanocrystal superlattices in the terahertz regime

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F15%3A10314723" target="_blank" >RIV/00216208:11320/15:10314723 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/15:00448983

Výsledek na webu

<a href="http://dx.doi.org/10.1103/PhysRevB.91.195443" target="_blank" >http://dx.doi.org/10.1103/PhysRevB.91.195443</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1103/PhysRevB.91.195443" target="_blank" >10.1103/PhysRevB.91.195443</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Charge transport in silicon nanocrystal superlattices in the terahertz regime

Popis výsledku v původním jazyce

Silicon nanocrystals prepared by thermal decomposition of silicon-rich 2-5-nm-thick SiOx layers (0.64 <= x <= 1) are investigated using time-resolved terahertz spectroscopy. The samples consist of a superlattice of isolated monolayers composed of Si nanocrystals with controlled variable size and filling fraction. Experiments with variable optical pump fluence over almost two orders of magnitude allow us to determine the depolarization fields in the structure. Careful consideration of the local fields along with Monte Carlo calculations of the microscopic conductivity of Si nanocrystals supported by structural characterization of the samples provide detailed information about the electrical connectivity of nanocrystals and about the charge transport among them. Well below the percolation threshold, nanocrystals grow mostly isolated from each other. In thicker or in more Si-enriched layers, nanocrystals merge during their growth and form tens-of-nanometer-sized photoconducting Si structu

Název v anglickém jazyce

Charge transport in silicon nanocrystal superlattices in the terahertz regime

Popis výsledku anglicky

Silicon nanocrystals prepared by thermal decomposition of silicon-rich 2-5-nm-thick SiOx layers (0.64 <= x <= 1) are investigated using time-resolved terahertz spectroscopy. The samples consist of a superlattice of isolated monolayers composed of Si nanocrystals with controlled variable size and filling fraction. Experiments with variable optical pump fluence over almost two orders of magnitude allow us to determine the depolarization fields in the structure. Careful consideration of the local fields along with Monte Carlo calculations of the microscopic conductivity of Si nanocrystals supported by structural characterization of the samples provide detailed information about the electrical connectivity of nanocrystals and about the charge transport among them. Well below the percolation threshold, nanocrystals grow mostly isolated from each other. In thicker or in more Si-enriched layers, nanocrystals merge during their growth and form tens-of-nanometer-sized photoconducting Si structu

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/GA13-12386S" target="_blank" >GA13-12386S: Fotovodivost a dynamika excitací v nanostrukturovaných a neuspořádaných polovodičích na ultrarychlé časové škále</a><br>

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physical Review B - Condensed Matter and Materials Physics

ISSN

1098-0121

e-ISSN

—

Svazek periodika

91

Číslo periodika v rámci svazku

19

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

10

Strana od-do

—

Kód UT WoS článku

000355170900003

EID výsledku v databázi Scopus

2-s2.0-84930946452