Study of electromigration phenomena in Au/p-type CdTe with two Schottky contacts

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F18%3A10384455" target="_blank" >RIV/00216208:11320/18:10384455 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68081723:_____/18:00495576

Výsledek na webu

<a href="https://doi.org/10.1088/1748-0221/13/10/C10002" target="_blank" >https://doi.org/10.1088/1748-0221/13/10/C10002</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1748-0221/13/10/C10002" target="_blank" >10.1088/1748-0221/13/10/C10002</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Study of electromigration phenomena in Au/p-type CdTe with two Schottky contacts

Popis výsledku v původním jazyce

In this work we present the transient measurements along a Au/CdTe/Au structure in the temperature range of 323K-363K to deepen the understanding of the electromigration phenomena. Removal of the anode contact and of a thin layer below was necessary after each measurement to have similar distribution of the donor ions in the depletion region for each new measurement. The diffusion coefficients at different temperatures have been determined and the activation energy of the electromigration process was extracted to be 0.36 eV. Current-Voltage measurements have been carried out and revealed that the thermal carrier generation in the depleted region is the dominant carrier mechanism responsible for the bias dependence of the leakage current. The acceptors concentration at different temperatures was determined from the resistivity measurements.

Název v anglickém jazyce

Study of electromigration phenomena in Au/p-type CdTe with two Schottky contacts

Popis výsledku anglicky

In this work we present the transient measurements along a Au/CdTe/Au structure in the temperature range of 323K-363K to deepen the understanding of the electromigration phenomena. Removal of the anode contact and of a thin layer below was necessary after each measurement to have similar distribution of the donor ions in the depletion region for each new measurement. The diffusion coefficients at different temperatures have been determined and the activation energy of the electromigration process was extracted to be 0.36 eV. Current-Voltage measurements have been carried out and revealed that the thermal carrier generation in the depleted region is the dominant carrier mechanism responsible for the bias dependence of the leakage current. The acceptors concentration at different temperatures was determined from the resistivity measurements.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Instrumentation

ISSN

1748-0221

e-ISSN

—

Svazek periodika

13

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

9

Strana od-do

—

Kód UT WoS článku

000447120000001

EID výsledku v databázi Scopus

2-s2.0-85056096533