High frequency noise calculation in Schottky metal-semiconductor-metal structure and parameter retrieval of nanometric CdTe structure
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F18%3A10384698" target="_blank" >RIV/00216208:11320/18:10384698 - isvavai.cz</a>
Nalezeny alternativní kódy
RIV/68081723:_____/18:00493520
Výsledek na webu
<a href="https://doi.org/10.1016/j.tsf.2017.10.060" target="_blank" >https://doi.org/10.1016/j.tsf.2017.10.060</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.tsf.2017.10.060" target="_blank" >10.1016/j.tsf.2017.10.060</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
High frequency noise calculation in Schottky metal-semiconductor-metal structure and parameter retrieval of nanometric CdTe structure
Popis výsledku v původním jazyce
An analytical model to calculate the noise spectral density in Metal-Semiconductor-Metal (M-S-M) structure of Schottky contacts has been developed. The model based on the linearization of Langevin approach of carrier motion inside a bulk semiconductor, and taking into account the fluctuations in the leakage current through the structure due to the barrier lowering by the image force effect. Particularly, the calculations describe two quantities of noise: electric field and total current spectral densities. The results obtained from the Au-CdTe-Au Schottky structure exhibit sharp resonances due to the effect of plasma frequency oscillations and the relative thickness of the depletion region below the anode. Moreover, the noise current spectrum exhibits Lorentzian behavior when the M-S-M has the form of a homogenous structure (thickness of depletion region approximate to 0). These results are in agreement with that reported by Monte Carlo technique of metal Schottky structure. The discussion of the noise spectra as a function of structure parameters revealed that the nanometric M-S-M structures with undoped CdTe can be used as Schottky detectors/emitters in Terahertz frequency applications.
Název v anglickém jazyce
High frequency noise calculation in Schottky metal-semiconductor-metal structure and parameter retrieval of nanometric CdTe structure
Popis výsledku anglicky
An analytical model to calculate the noise spectral density in Metal-Semiconductor-Metal (M-S-M) structure of Schottky contacts has been developed. The model based on the linearization of Langevin approach of carrier motion inside a bulk semiconductor, and taking into account the fluctuations in the leakage current through the structure due to the barrier lowering by the image force effect. Particularly, the calculations describe two quantities of noise: electric field and total current spectral densities. The results obtained from the Au-CdTe-Au Schottky structure exhibit sharp resonances due to the effect of plasma frequency oscillations and the relative thickness of the depletion region below the anode. Moreover, the noise current spectrum exhibits Lorentzian behavior when the M-S-M has the form of a homogenous structure (thickness of depletion region approximate to 0). These results are in agreement with that reported by Monte Carlo technique of metal Schottky structure. The discussion of the noise spectra as a function of structure parameters revealed that the nanometric M-S-M structures with undoped CdTe can be used as Schottky detectors/emitters in Terahertz frequency applications.
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
—
OECD FORD obor
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Návaznosti výsledku
Projekt
Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.
Návaznosti
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Ostatní
Rok uplatnění
2018
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Thin Solid Films
ISSN
0040-6090
e-ISSN
—
Svazek periodika
645
Číslo periodika v rámci svazku
1
Stát vydavatele periodika
NL - Nizozemsko
Počet stran výsledku
5
Strana od-do
340-344
Kód UT WoS článku
000418305200050
EID výsledku v databázi Scopus
2-s2.0-85033432138