Calculations of High-Frequency Noise Spectral Density of Different CdTe Metal-Semiconductor-Metal Schottky Contacts

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F19%3A10400003" target="_blank" >RIV/00216208:11320/19:10400003 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68081723:_____/19:00509581

Výsledek na webu

<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=dbhEd2_z~K" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=dbhEd2_z~K</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s11664-019-07612-w" target="_blank" >10.1007/s11664-019-07612-w</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Calculations of High-Frequency Noise Spectral Density of Different CdTe Metal-Semiconductor-Metal Schottky Contacts

Popis výsledku v původním jazyce

An analytical approach for the study of high-frequency noise in different CdTe Schottky contacts is proposed. The model takes into account the fluctuations from three primary current sources: the leakage current through the Schottky barrier, the fluctuations of surface charge current, and the excess carrier density produced by light illumination (photocurrent). In particular, the current densities related to the perturbation of the electric field inside the whole structure and the free carrier fluctuations are used to determine the detectivity in the Giga and the Terahertz frequencies. It is shown that the current spectral density exhibits a resonance peak near 109 Hz due to the free carrier concentration. The excess carrier fluctuations show a negligible contribution to the total spectral current density. It was found that the Au-S-Au structure presents a high detectivity due to their low noise level of the leakage current. These findings and the detailed model describing the current fluctuation processes in the detector is crucial for the development of detection technology.

Název v anglickém jazyce

Calculations of High-Frequency Noise Spectral Density of Different CdTe Metal-Semiconductor-Metal Schottky Contacts

Popis výsledku anglicky

An analytical approach for the study of high-frequency noise in different CdTe Schottky contacts is proposed. The model takes into account the fluctuations from three primary current sources: the leakage current through the Schottky barrier, the fluctuations of surface charge current, and the excess carrier density produced by light illumination (photocurrent). In particular, the current densities related to the perturbation of the electric field inside the whole structure and the free carrier fluctuations are used to determine the detectivity in the Giga and the Terahertz frequencies. It is shown that the current spectral density exhibits a resonance peak near 109 Hz due to the free carrier concentration. The excess carrier fluctuations show a negligible contribution to the total spectral current density. It was found that the Au-S-Au structure presents a high detectivity due to their low noise level of the leakage current. These findings and the detailed model describing the current fluctuation processes in the detector is crucial for the development of detection technology.

Druh

J_SC - Článek v periodiku v databázi SCOPUS

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Electronic Materials

ISSN

0361-5235

e-ISSN

—

Svazek periodika

48

Číslo periodika v rámci svazku

12

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

7

Strana od-do

7806-7812

Kód UT WoS článku

—

EID výsledku v databázi Scopus

2-s2.0-85073795413