Calculations of High-Frequency Noise Spectral Densityof Different CdTe Metal–Semiconductor–Metal Schottky Contacts

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081723%3A_____%2F19%3A00509581" target="_blank" >RIV/68081723:_____/19:00509581 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216208:11320/19:10400003

Výsledek na webu

<a href="https://link.springer.com/content/pdf/10.1007/s11664-019-07612-w.pdf" target="_blank" >https://link.springer.com/content/pdf/10.1007/s11664-019-07612-w.pdf</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s11664-019-07612-w" target="_blank" >10.1007/s11664-019-07612-w</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Calculations of High-Frequency Noise Spectral Densityof Different CdTe Metal–Semiconductor–Metal Schottky Contacts

Popis výsledku v původním jazyce

An analytical approach for the study of high-frequency noise in different CdTeSchottky contacts is proposed. The model takes into account the fluctuationsfrom three primary current sources: the leakage current through the Schottkybarrier, the fluctuations of surface charge current, and the excess carrierdensity produced by light illumination (photocurrent). In particular, the cur-rent densities related to the perturbation of the electric field inside the wholestructure and the free carrier fluctuations are used to determine the detec-tivity in the Giga and the Terahertz frequencies. It is shown that the currentspectral density exhibits a resonance peak near 109Hz due to the free carrierconcentration. The excess carrier fluctuations show a negligible contributionto the total spectral current density. It was found that the Au-S-Au structurepresents a high detectivity due to their low noise level of the leakage current.These findings and the detailed model describing the current fluctuationprocesses in the detector is crucial for the development of detection technology

Název v anglickém jazyce

Calculations of High-Frequency Noise Spectral Densityof Different CdTe Metal–Semiconductor–Metal Schottky Contacts

Popis výsledku anglicky

An analytical approach for the study of high-frequency noise in different CdTeSchottky contacts is proposed. The model takes into account the fluctuationsfrom three primary current sources: the leakage current through the Schottkybarrier, the fluctuations of surface charge current, and the excess carrierdensity produced by light illumination (photocurrent). In particular, the cur-rent densities related to the perturbation of the electric field inside the wholestructure and the free carrier fluctuations are used to determine the detec-tivity in the Giga and the Terahertz frequencies. It is shown that the currentspectral density exhibits a resonance peak near 109Hz due to the free carrierconcentration. The excess carrier fluctuations show a negligible contributionto the total spectral current density. It was found that the Au-S-Au structurepresents a high detectivity due to their low noise level of the leakage current.These findings and the detailed model describing the current fluctuationprocesses in the detector is crucial for the development of detection technology

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Electronic Materials

ISSN

0361-5235

e-ISSN

—

Svazek periodika

48

Číslo periodika v rámci svazku

12

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

7

Strana od-do

7806-7812

Kód UT WoS článku

000519972500024

EID výsledku v databázi Scopus

2-s2.0-85073795413