Investigation of Deep Levels in CdZnTeSe Crystal and Their Effect on the Internal Electric Field of CdZnTeSe Gamma-Ray Detector

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F19%3A10399558" target="_blank" >RIV/00216208:11320/19:10399558 - isvavai.cz</a>

Výsledek na webu

<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=aiSyalpC5j" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=aiSyalpC5j</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/TNS.2019.2925311" target="_blank" >10.1109/TNS.2019.2925311</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Investigation of Deep Levels in CdZnTeSe Crystal and Their Effect on the Internal Electric Field of CdZnTeSe Gamma-Ray Detector

Popis výsledku v původním jazyce

A study of deep levels in CdZnTeSe radiation-detection materials is presented. The approach relies on electrical methods that combine time and temperature evolution of the electric field and electric current after switching on the bias voltage. Two optical methods were also applied to study the deep levels. The first method utilizes the temperature and temporal analysis of the electric field evolution after switching off an additional light illuminating the sample at a wavelength of 940 nm. The second method involved measuring of the electric field spectral dependence during near infrared illumination. The results are compared with those obtained with the high-quality CdZnTe detector-grade material. We conclude that the introduction of Se into the lattice leads to a shift of the second ionization level of the Cd vacancy toward the conduction band, as predicted recently by first-principles calculations based on screened hybrid functionals.

Název v anglickém jazyce

Investigation of Deep Levels in CdZnTeSe Crystal and Their Effect on the Internal Electric Field of CdZnTeSe Gamma-Ray Detector

Popis výsledku anglicky

A study of deep levels in CdZnTeSe radiation-detection materials is presented. The approach relies on electrical methods that combine time and temperature evolution of the electric field and electric current after switching on the bias voltage. Two optical methods were also applied to study the deep levels. The first method utilizes the temperature and temporal analysis of the electric field evolution after switching off an additional light illuminating the sample at a wavelength of 940 nm. The second method involved measuring of the electric field spectral dependence during near infrared illumination. The results are compared with those obtained with the high-quality CdZnTe detector-grade material. We conclude that the introduction of Se into the lattice leads to a shift of the second ionization level of the Cd vacancy toward the conduction band, as predicted recently by first-principles calculations based on screened hybrid functionals.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GA18-06818S" target="_blank" >GA18-06818S: Vývoj detektorů vysokoenergetického záření na bázi CdSeTe a CdZnSeTe</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

IEEE Transactions on Nuclear Science

ISSN

0018-9499

e-ISSN

—

Svazek periodika

66

Číslo periodika v rámci svazku

8

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

7

Strana od-do

1952-1958

Kód UT WoS článku

000481936800005

EID výsledku v databázi Scopus

2-s2.0-85071025608