Product of mobility and lifetime of charge carriers in CdTe determined from low-frequency current fluctuations

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F24%3A10490925" target="_blank" >RIV/00216208:11320/24:10490925 - isvavai.cz</a>

Výsledek na webu

<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=EBZk-EdnyW" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=EBZk-EdnyW</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1038/s41598-024-51541-6" target="_blank" >10.1038/s41598-024-51541-6</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Product of mobility and lifetime of charge carriers in CdTe determined from low-frequency current fluctuations

Popis výsledku v původním jazyce

The model, which clarifies the low-frequency fluctuations of the current flowing in CdTe sample, makes it possible to determine the product of the mobility and lifetime of the charges in mentioned semiconductor. This model, with general validity for semiconductors, is based on the interaction of shallow traps with the valence or conduction band. As a result of the action of these centers, current fluctuations appear, the mean amplitude of which increases linearly with the inverse value of the frequency. It was found that the slope of this dependence is proportional to the product of mobility mu and a constant which is common to all shallow traps and which is denoted by the symbol a. The lifetime of charges located on shallow traps varies according to the relationship tau = a/f and for fmin it acquires a maximum value of tau max, which agrees with the stationary lifetime. For the p-CdTe crystalline semiconductor the mobility-lifetime product mu p tau p = (6.6 +/- 0.3) x 10-7 cm2V-1was obtained. Similar study of n-type CdTe showed mu n tau n = (7.5 +/- 0.3) x 10-8 cm2V-1.

Název v anglickém jazyce

Product of mobility and lifetime of charge carriers in CdTe determined from low-frequency current fluctuations

Popis výsledku anglicky

The model, which clarifies the low-frequency fluctuations of the current flowing in CdTe sample, makes it possible to determine the product of the mobility and lifetime of the charges in mentioned semiconductor. This model, with general validity for semiconductors, is based on the interaction of shallow traps with the valence or conduction band. As a result of the action of these centers, current fluctuations appear, the mean amplitude of which increases linearly with the inverse value of the frequency. It was found that the slope of this dependence is proportional to the product of mobility mu and a constant which is common to all shallow traps and which is denoted by the symbol a. The lifetime of charges located on shallow traps varies according to the relationship tau = a/f and for fmin it acquires a maximum value of tau max, which agrees with the stationary lifetime. For the p-CdTe crystalline semiconductor the mobility-lifetime product mu p tau p = (6.6 +/- 0.3) x 10-7 cm2V-1was obtained. Similar study of n-type CdTe showed mu n tau n = (7.5 +/- 0.3) x 10-8 cm2V-1.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Scientific Reports

ISSN

2045-2322

e-ISSN

2045-2322

Svazek periodika

14

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

6

Strana od-do

899

Kód UT WoS článku

001139656300045

EID výsledku v databázi Scopus

2-s2.0-85181741791