Advanced X-ray diffraction imaging techniques for semiconductor wafer characterisation

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F02%3A00007825" target="_blank" >RIV/00216224:14310/02:00007825 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Advanced X-ray diffraction imaging techniques for semiconductor wafer characterisation

Popis výsledku v původním jazyce

Wafer quality inspection and defect analysis are crucial for improvements of the wafer fabrication technology as well as for the correlation of device properties with the processes of wafer treating. This work demonstrates trends of high-resolution X-raydiffraction imaging techniques with synchrotron radiation sources and their capability for detailed quality inspection of wafers concerning their structural perfection. We apply these methods to visualise and to characterise the defects and deformationsinduced by growing, cutting, grinding, etching and gluing in the production of semiconductor wafers (in particular Si and GaAs wafers) and in ultra-thin wafers. We present synchrotron topography and synchrotron area diffractometry methods to analyse qualitatively and quantitatively: dislocations and lineages, micro-defects and micro-cracks, wafer tilts and warpages, tensors of local lattice rotations.

Název v anglickém jazyce

Advanced X-ray diffraction imaging techniques for semiconductor wafer characterisation

Popis výsledku anglicky

Wafer quality inspection and defect analysis are crucial for improvements of the wafer fabrication technology as well as for the correlation of device properties with the processes of wafer treating. This work demonstrates trends of high-resolution X-raydiffraction imaging techniques with synchrotron radiation sources and their capability for detailed quality inspection of wafers concerning their structural perfection. We apply these methods to visualise and to characterise the defects and deformationsinduced by growing, cutting, grinding, etching and gluing in the production of semiconductor wafers (in particular Si and GaAs wafers) and in ultra-thin wafers. We present synchrotron topography and synchrotron area diffractometry methods to analyse qualitatively and quantitatively: dislocations and lineages, micro-defects and micro-cracks, wafer tilts and warpages, tensors of local lattice rotations.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2002

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Materials Structure

ISSN

1211-5894

e-ISSN

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Svazek periodika

9

Číslo periodika v rámci svazku

2

Stát vydavatele periodika

CZ - Česká republika

Počet stran výsledku

2

Strana od-do

87-88

Kód UT WoS článku

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EID výsledku v databázi Scopus

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