Zrcadlový jev v PECVD reaktoru a jeho vysvětlení pomocí MC-PIC počitačové simulace

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F04%3A00011467" target="_blank" >RIV/00216224:14310/04:00011467 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Mirror effect in PECVD reactor and its explanation via MC-PIC computer simulation

Popis výsledku v původním jazyce

We have studied thin film deposition from methane and thin film sputtering in argon in low pressure rf discharge. We have observed that thickness of a thin film deposited on the upper (grounded) electrode has mirrored substrates placed on the bottom rf powered electrode. The mirror effect has been studied via Monte Carlo - Particle In Cell (MC-PIC) computer simulation. In our explanation the mirror effect is caused by the difference between secondary electron emission coefficient of substrate material and material of the powered electrode. This difference in the secondary electron emission coefficient affects plasma density upon the substrates and this leads to higher or lower deposition rate on the upper electrode. In our simulation we have calculateddistribution of impact position for electrons on grounded electrode that have flew from the powered electrode. We have calculated this distribution for ions created in ionization collisions (of secondary electrons with neutrals) too. We

Název v anglickém jazyce

Mirror effect in PECVD reactor and its explanation via MC-PIC computer simulation

Popis výsledku anglicky

We have studied thin film deposition from methane and thin film sputtering in argon in low pressure rf discharge. We have observed that thickness of a thin film deposited on the upper (grounded) electrode has mirrored substrates placed on the bottom rf powered electrode. The mirror effect has been studied via Monte Carlo - Particle In Cell (MC-PIC) computer simulation. In our explanation the mirror effect is caused by the difference between secondary electron emission coefficient of substrate material and material of the powered electrode. This difference in the secondary electron emission coefficient affects plasma density upon the substrates and this leads to higher or lower deposition rate on the upper electrode. In our simulation we have calculateddistribution of impact position for electrons on grounded electrode that have flew from the powered electrode. We have calculated this distribution for ions created in ionization collisions (of secondary electrons with neutrals) too. We

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BL - Fyzika plasmatu a výboje v plynech

OECD FORD obor

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Projekt

<a href="/cs/project/GA202%2F03%2F0827" target="_blank" >GA202/03/0827: Studium elementárních procesů v nízkoteplotním a technologicky orientovaném plazmatu a vývoj relevantních diagnostických metod</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2004

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Czech. J. Phys.

ISSN

0011-4626

e-ISSN

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Svazek periodika

2004

Číslo periodika v rámci svazku

54

Stát vydavatele periodika

CZ - Česká republika

Počet stran výsledku

6

Strana od-do

"C527"-"C532"

Kód UT WoS článku

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EID výsledku v databázi Scopus

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